| PART |
Description |
Maker |
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| ZVP0545G ZVP0545GTA |
SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
P-channel MOSFET
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| ZVN2106G ZVN2106GTA |
N-channel MOSFET
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Zetex Semiconductors
Diodes
|
| STT3405P |
P-Channel Enhancement Mode Mos.FET
|
SeCoS
|
| STT640509 |
P-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| MRF171 |
N-Channel Enhancement Mode TMOS RF FET
|
ASI[Advanced Semiconductor]
|
| STT3458N |
N-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| STT3434N |
N-Channel Enhancement Mode Mos.FET
|
SeCoS
|
| SSE90N06-15P |
N-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
