| PART |
Description |
Maker |
| AFT09MS007N AFT09MS007NT1 |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| IPW60R041P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPA50R650CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPP50R380CE-15 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STP400N4F6 STI400N4F6 |
High avalanche ruggedness
|
STMicroelectronics
|
| STL20N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| STF28N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STP80N6F6 |
High avalanche ruggedness
|
STMicroelectronics
|
| STP100N8F6 |
High avalanche ruggedness
|
STMicroelectronics
|
| STP130N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| STP100N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPD60R800CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
