| PART |
Description |
Maker |
| MSICSN05120 MSICSN05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| LSIC2SD120C10 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
| IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH05G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| BAT64-02V BAT64-02W BAT64-05 BAT64 BAT64-07 BAT64- |
Schottky Diodes - Silicon AF Schottky diode for low-loss, fast-recovery, meter protection, ...
Silicon Schottky Diodes
|
INFINEON[Infineon Technologies AG]
|
| SML05SC06D3B SML05SC06D3A |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| SML10SIC03NC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| SCS215AE |
SiC Schottky Barrier Diode
|
Rohm
|
