| PART |
Description |
Maker |
| FT231XS-X FT231XQ-X DSFT231X FT231XQ-T FT231XS-R |
Future Technology Devices International Ltd FT231X
Single chip USB to asynchronous serial data transfer interface
Future Technology Devices International Ltd.
|
List of Unclassifed Manufacturers
Future Technology Devices I...
Future Technology Devic...
|
| USB-COM422 |
Future Technology Devices International Ltd
|
List of Unclassifed Manufac...
|
| FT2232D |
Future Technology Devices International Ltd
|
List of Unclassifed Manufacturers
|
| FT313HL FT313HL-X FT313HP FT313HP-R FT313HP-X FT31 |
USB2.0 HS Embedded Host Controller
Single chip USB2.0 Hi-Speed compatible
Future Technology Devices International Ltd
|
Future Technology Devic...
List of Unclassifed Man...
|
| FT240XQ-R FT240XS-R |
Future Technology Devices International Ltd
The FT240X is a USB to parallel FIFO interface with the following advanced features
USB 8-BIT FIFO IC
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
Future Technology Devic...
|
| UPC8232T5N-E2-A UPC8232T5N UPC8232T5N-E2 |
B IPOLAR ANALOG INTE GR ATE D CIR CUIT
|
California Eastern Labs
|
| EP1AGX50CF484C6N EP1AGX50DF1152C6N EP1AGX50DF1152I |
The ArriaTM GX family of devices combines 3.125 gigabits per second (Gbps) serial transceivers with reliable packaging technology
|
Altera Corporation
|
| 2FB-XX-F-353 |
FUTURE BUS CONNECTOR
|
Adam Technologies, Inc.
|
| TSOP17..XG1 TSOP1730XG102 UC1682XFBZ UPC8232T5N-E2 |
Synchronous Step-Down DC/DC Converter with built-in LDO Regulator in parallel plus Voltage Detector 同步降压型DC / DC转换器内置LDO的同时加电压检测器调节
High Performance 8-bit Microcontroller
HIGH-VOLTAGE MIXED-SIGNAL IC
B IPOLAR ANALOG INTE GR ATE D CIR CUIT
|
Torex Semiconductor, Ltd.
ETC
CEL
TOREX[Torex Semiconductor]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| P1804U P3100SCMC P3100SD A2106Z P2103A P2103ACMC P |
SIDACtor devices
solid state crowbar devices
|
TECCOR [Teccor Electronics]
TECCOR[Teccor Electronics]
|
