| PART |
Description |
Maker |
| FD1000FH-56 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| 2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
| 2SC2670 |
TRANSISTOR (HIGH/ AM HIGH/ AM FREQUENCY AMPLIFIER/ CONVERTER APPLICATIONS)
XTAL MTL T/H HC49/US
TRANSISTOR (HIGH, AM HIGH, AM FREQUENCY AMPLIFIER, CONVERTER APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC2216 2SC2717 E000694 |
From old datasheet system
TRANSISTOR (HIGH FREQUENCY, AM HIGH FREQUENCY AMPLIFIER, AM FREQUENCY CONVERTER APPLICATIONS)
TRANSISTOR (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| EKE |
Aluminum Electrolytic Capacitors, Radial Style, Long Lifetime, High AC Rating, Polarized AI Electrolytic Capacitor, High C-U Product, Small Dimensions, Low Impedance over High Temperature and Frequency Ranges
|
Vishay
|
| 567UVG010MFBJ 187UVG016MFBJ |
High temperature ?Very Low ESR ?High ripple current ?stable with temperature ?High frequency
|
Illinois Capacitor, Inc...
|
| 2SC3355 2SC3355-T |
For amplify low noise and high frequency
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
| KSC2785 KSC2785GBU KSC2785GTA KSC2785LTA KSC2785OB |
Audio Frequency Amplifier & High Frequency OSC.
Audio Frequency Amplifier High
NPN Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| HKQ040211NJ-T |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)
|
Taiyo Yuden (U.S.A.), I...
|
| FDMF6704V |
The Xtra Small, High Performance, High Frequency DrMOS Module with LDO
|
Fairchild Semiconductor
|
|
