| PART |
Description |
Maker |
| 19025-0002 19025-0008 64001-1400 64001-1700 64001- |
.187 Tab Size Nylon Insulated and Fully Insulated Quick Disconnect Solderless Terminals
|
MolexKits
|
| CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| IRGP4066D-EPBF IRGP4066DPBF IRGP4066DPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
| IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管（IGBTs）（绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| BCR16A BCR16B BCR16E BCR16C |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MEDIUM POWER USE A B C : NON-INSULATED TYPE E : INSULATED TYPE GLASS PASSIVATION TYPE
|
Infineon Technologies AG
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| SSM25G45EM |
N-CHANNEL INSULATED-GATE BOPOLAR TRANSISTOR
N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
|
List of Unclassifed Manufacturers
ETC[ETC]
Silicon Standard Corp.
|
| QM5HG-24 |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
MEDIUM POWER SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| RM150DZ-24 RM150DZ-2H RM150DZ-H RM150DZ-M RM150UZ- |
HIGH POWER GENERAL USE INSULATED TYPE
HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型
BATTERY SLA 12V 7AH .250 TERM 大功率常规使用绝缘型
ADAPTOR 0.187 TO 0.250 TERMINAL 大功率常规使用绝缘型
Insert strip for laser printer, lettering field: 62 x 10 mm - ESL 62 X 10 大功率常规使用绝缘型
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Sem...
|
| PM300CVA06005 PM300CVA060 PM300CVA06009 |
FLAT-BASE TYPE INSULATED PACKAGE
INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
|
