| PART |
Description |
Maker |
| AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
ALLIANCE MEMORY INC
ALSC[Alliance Semiconductor Corporation]
ETC[ETC]
Alliance Semiconductor, Corp.
|
| IDW10G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
|
| GVT73128A16 73128A16 |
REVOLUTIONARY PINOUT 128K X 16
From old datasheet system
|
Galvantech
|
| PDM31096SA8TTY PDM31096SA8TTR PDM31096SA8SOTR PDM3 |
4 megabit 3.3V static RAM 512K x 8-bit revolutionary pinout
|
PARADIGM
|
| SPD02N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| K6R1004C1A K6R1004C1A-12 K6R1004C1A-15 K6R1004C1A- |
256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IDT71V124S20 IDT71V124S15 IDT71V124S20YI IDT71V124 |
3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| KM641003B KM641003B-12 KM641003B-10 KM641003B-8 |
256KX4 BIT (WITH OE) HIGH SPEED STATIC RAM(5.0V OPERATING), REVOLUTIONARY PIN OUT
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IPW60R099CP IPW60R099CP08 |
Cool MOS Power Transistor Feature new revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPP24N60C3 SPP24N60C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPB02N60S5 SPB02N60S507 |
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| IPW60R250CP |
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
