| PART |
Description |
Maker |
| HX316C10FW-4 |
4GB 512M x 64-Bit DDR3-1600
|
List of Unclassifed Man...
|
| HX313C9FB-4 |
4GB 512M x 64-Bit DDR3-1333
|
List of Unclassifed Man...
|
| HX313C9FR-4 |
4GB 512M x 64-Bit DDR3-1333
|
List of Unclassifed Man...
|
| EDE5104ABSE EDE5104ABSE-5C-E EDE5108ABSE-5C-E EDE5 |
(EDE51xxABSE) 512M bits DDR2 SDRAM
512M bits DDR2 SDRAM 64M X 8 DDR DRAM, 0.5 ns, PBGA64
512M bits DDR2 SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA64
|
Elpida Memory, Inc.
|
| EDE5116GBSA-5A-E EDE5104GBSA-4A-E EDE5116GBSA-4A-E |
512M bits DDR-II SDRAM 512M比特的DDR - II内存
512M bits DDR-II SDRAM 32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
Elpida Memory, Inc.
|
| 24C44 CAT24C44 CAT24C44SITE13 CAT24C44PITE13 CAT24 |
256-Bit Serial Nonvolatile CMOS Static RAM
256-BitSerialNonvolatileCMOSStaticRAM
|
CATALYST[Catalyst Semiconductor]
CatalystSemiconductor
|
| X9268US24-2.7 X9268UT24-2.7 X9268UT24I-2.7 INTERSI |
Dual Supply/Low Power/256-Tap/2-Wire Bus DUAL 50K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO24
Dual Supply/Low Power/256-Tap/2-Wire Bus 双电低Power/256-Tap/2-Wire巴士
|
Intersil, Corp.
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| LH5420-P-35 LH5420-P-30 LH5420-P-25 |
256 x 36 x 2 Bidirectional FIFO 256 × 36 × 2双向先进先出
|
Sharp Corporation
Sharp, Corp.
|
| EDJ1108DJBG-JS-F EDJ1116DJBG-JS-F EDJ1116DJBG-DJ-F |
Differential clock inputs
1G bits DDR3 SDRAM
1G bits DDR3 SDRAM
|
Elpida Memory
|
| M48T39YPM M48T39Y M48T39Y-100PM1 M48T39Y-150PM1 |
256 Kb 32K x8 TIMEKEEPER SRAM
DIODE ZENER SINGLE 500mW 3.9Vz 20mA-Izt 0.05 10uA-Ir 1 SOD-123 3K/REEL 256 KB2K的x8 SRAM的计时器
|
http://
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
