| PART |
Description |
Maker |
| TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCF8402 TPCF840209 |
Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| FF1400R12IP4 |
IGBT Modules up to 1200V Dual ; Package: AG-PRIME3-1; IC (max): 1,400.0 A; VCE(sat) (typ): 1.75 V; Configuration: Dual Modules; Technology: IGBT4; Housing: PrimePACK 3;
PrimePACK? Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
PrimePACK?? Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
|
Infineon Technologies AG
|
| IDP30C65D2 |
Emitter Controlled Diode Rapid 2 Common Cathode Series
|
Infineon Technologies A...
|
| IDP20C65D2 |
Emitter Controlled Diode Rapid 2 Common Cathode Series
|
Infineon Technologies A...
|
| PSCH75 |
Single Phase Half Controlled Bridges with freewheeling diode
|
Powersem GmbH
|
| SIDC56D170E6 SIDC56D170E608 |
Fast switching diode chip in Emitter Controlled -Technology
|
Infineon Technologies AG
|
