PART |
Description |
Maker |
APT8014JLL |
POWER MOS 7 800V 42A 0.140 Ohm
|
Advanced Power Technology
|
IRF1310N |
Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
|
IRF[International Rectifier]
|
SPI42N03S2L-13 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-262, RDSon = 12.9mOhm, 42A, LL
|
Infineon
|
IRFIB6N60A IRFIB6N60APBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A) HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=0.75ohm/ Id=5.5A)
|
IRF[International Rectifier]
|
IRFBC30S IRFBC30L |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)
|
IRF[International Rectifier]
|
IXTH42N20 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 42A I(D) | TO-218VAR
|
|
IRFBC20L IRFBC20S |
Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=2.2A) Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
IRF[International Rectifier]
|
SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 600V N-Channel B-FET / Substitute of SSI4N60A 600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
STU26NM60 STU26NM60I |
26 A, 600 V, 0.135 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 26A I(D) | TO-220VAR 晶体管| MOSFET的| N沟道| 600V的五(巴西)直|6A条(丁)|20VAR N-CHANNEL 600V 0.125 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET
|
STMICROELECTRONICS Integrated Device Technology, Inc. SGS Thomson Microelectronics
|
HUF75329S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 42A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 42A条(丁)|263AB
|
Intersil, Corp.
|
APT8014JFLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 800V 42A 0.140 Ohm
|
Advanced Power Technology Ltd.
|