| PART |
Description |
Maker |
| IXGX64N60B3D1 IXGR48N60C3D1 IXGR48N60B3D1 IXGP48N6 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
|
IXYS Corporation
|
| IRFIBF30G IRFIBF30GPBF |
900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=1.9A)
|
IRF[International Rectifier]
|
| IRFPF50 IRFPF50PBF |
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=900V, Rds(on)=1.6ohm, Id=6.7A)
|
International Rectifier
|
| SGB02N60 SGP02N60 Q67040-S4504 Q67040-S4505 Q67041 |
FAST IGBT IN NPT TECHNOLOGY 快速IGBT技术在不扩散核武器条约
IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 2A 600V TO 252AA SMD IGBT
IGBTs & DuoPacks - 2A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
| IGP01N120H2 IGB01N120H2 IGD01N120H2 IGB01N120H2E30 |
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT D2Pak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT DPak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT TO220
HighSpeed 2-Technology
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| IXYH12N250CV1HV |
High Voltage XPTTM IGBT w/ Diode
|
IXYS Corporation
|
| IXYR50N120C3D1 |
1200V XPTTM IGBT GenX3TM w/ Diode
|
IXYS Corporation
|
| FQA9N90C |
900V N-Channel Q-FET
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| STB6NB90 6439 |
N - CHANNEL 900V - 1.7 Ohm - 5.8A - D 2 PAK PowerMESH MOSFET
From old datasheet system
N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET
N-CHANNEL Power MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
ST Microelectronics
|
| FQA8N90C |
900V N-Channel Q-FET
900V N-Channel MOSFET
TERMINAL 8 A, 900 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
