| PART |
Description |
Maker |
| IDD03SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
3 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-252
|
Infineon Technologies AG
|
| FDFC2P100 |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm 3 A, 20 V, 0.252 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| SUD45P03-15-E3 |
13 A, 30 V, 0.024 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 TO-252, 3 PIN
|
Vishay Intertechnology, Inc.
|
| SUR50N03-09P-T4-E3 VISHAYSILICONIX-SUR50N03-09P-T4 |
21 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 TO-252, DPAK-3
|
Vishay Intertechnology, Inc.
|
| SUR50N024-09P-T4-E3 SUR50N024-09P-E3 |
49 A, 22 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 TO-252, DPAK-3
|
Vishay Intertechnology, Inc.
VISHAY SILICONIX
|
| FS10ASH2 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-252 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 10A条（丁）|252
|
Cypress Semiconductor, Corp.
|
| NSR0530P2T5G |
Schottky Barrier Diode
30V 0.5A low VF SOD-923 Schottky Diode 0.5 A, 30 V, SILICON, SIGNAL DIODE
|
Rectron Semiconductor
|
| BAT68-02L BAT68-07 BAT68-08S BAT68-09S BAT68-06W B |
Silicon Schottky Diodes 硅肖特基二极
Schottky Diodes - Silicon RF Schottky diode for mixer applications in the VHF/UHF range
Schottky Diodes - Silicon RF Schottky diode array
|
INFINEON[Infineon Technologies AG]
|
| BD5200YS |
5 A, 200 V, SILICON, RECTIFIER DIODE, TO-252 ROHS COMPLIANT, PLASTIC PACKAGE-3
|
AVX, Corp.
|
| IP4286CZ6-TBF IP4286CZ6-TTY |
Integrated 4-channel ESD protection UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, MO-252
|
NXP Semiconductors N.V.
|
| BAT17 BAT17-05W BAT17-06 BAT17-07 BAT17-04 BAT17-0 |
Schottky Diodes - Silicon RF Schottky diode for mixer applications in the VHF/UHF range
Silicon Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
|
