PART |
Description |
Maker |
MBQ60T65PES |
High Speed Fieldstop Trench IGBT Second Generation
|
MagnaChip Semiconductor...
|
IKW20N60H3 |
High speed DuoPack : IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
STGWT60V60DF STGW60V60DF |
Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
|
STMicroelectronics
|
STGW40H120F2 |
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
|
ST Microelectronics
|
STGW40H120DF2 |
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
|
ST Microelectronics
|
IRG4BC40FPBF |
Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
International Rectifier
|
APTGT100A120TG |
Phase leg Fast Trench Field Stop IGBT Power Module 140 A, 1200 V, N-CHANNEL IGBT
|
Advanced Power Technology, Ltd. MICROSEMI[Microsemi Corporation]
|
AIGW50N65H5 |
High speed fast IGBT in TRENCHSTOPTM 5 technology
|
Infineon Technologies A...
|
RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805 HIGH SPEED SWITCHING USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
STGB30H60DF STGF30H60DF STGP30H60DF STGW30H60DF |
Low thermal resistance 600 V, 30 A high speed trench gate field-stop IGBT
|
STMicroelectronics ST Microelectronics
|
IKW50N65H5 IKW50N65H5-15 |
High speed 5 IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft antiparallel diode
|
Infineon Technologies A...
|