| PART |
Description |
Maker |
| USE34-260 USE11-500 |
Analog IC
Intel® Server Spare AAHPCIXUP, Riser, PCI-X
Intel® Server Spare AAHPCIXUP, Riser, PCI-X 模拟IC
|
Jameco Electronics
|
| SU8000RT3UPM |
SmartOnline 200-240V 8kVA 7.2kW Hot-Swap Spare Power Module - for redundant power applications
|
Tripp Lite. All Rights ...
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 6200.4225 |
Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 10A; Terminal Type: Quick Connect Solder Tabs; Spare fuse compartment; blackThermoplastic housing 10A, 250VAC, MALE, MAINS POWER CONNECTOR, SOLDER, SOCKET
|
SCHURTER AG
|
| SIDC01D60SIC2SAWN SIDC01D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 4A die sawn
Diodes - HV Chips - 600V, 4A die unsawn
|
Infineon
|
| SIDC02D60SIC2SAWN SIDC02D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 6A die sawn
Diodes - HV Chips - 600V, 6A die unsawn
|
Infineon
|
| SIDC00D60SIC2SAWN SIDC00D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 2A die sawn
Diodes - HV Chips - 600V, 2A die unsawn
|
Infineon
|
| HTCICC6402FUG HTCICC6403FUG |
HITAG RO64 Transponder IC
HTCICC64; HITAG RO64 transponder IC HTCICC6402FUG/AM<Uncased die|<<<1<Always Pb-free,;HTCICC6403FUG/AM<Uncased die|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| MS125 MS80 MS250 MS380 MS40 MS500 |
Surface Mount Si-Bridge-Rectifiers Si-Br?kengleichrichter f? die Oberfl?henmontage
Surface Mount Si-Bridge-Rectifiers Si-Br?kengleichrichter f? die Oberfl溷henmontage
|
DIOTEC[Diotec Semiconductor]
|
| MURC1060 |
MURC1060 Ultrafast Silicon Die
MURC1060 Ultrafast Silicon Die
|
SENSITRON[Sensitron]
|
| IXTD8P50-5B IXTD16P20-5B IXTD36P10-5B |
500 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
200 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
100 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
|
IXYS, Corp.
|
| AM29F010-1 AM29F010-120DGC1 AM29F010-120DGE1 AM29F |
1 megabit CMOS 5.0 volt-only, uniform sector flash memory- die revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash MemoryDie Revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 120 ns, UUC30
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 90 ns, UUC30
Evaluation Board for LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers 128K X 8 FLASH 5V PROM, 90 ns, UUC30
LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers; Package: MICRO SMD; No of Pins: 8
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only Uniform Sector Flash Memory-Die Revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory-Die Revision 1
|
ADVANCED MICRO DEVICES INC
PROM
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
