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D6RB2G132E1DF - FBAR/SAW Devices (SAW Duplexers)

D6RB2G132E1DF_9074780.PDF Datasheet


 Full text search : FBAR/SAW Devices (SAW Duplexers)


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DIELECTRIC DUPLEXER SAMPLE SPECIFICATION
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W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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