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D6RB2G132E1DF - FBAR/SAW Devices (SAW Duplexers)

D6RB2G132E1DF_9074780.PDF Datasheet


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Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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