| PART |
Description |
Maker |
| GS82582DT19AGE-400 GS82582DT19AGE-375 GS82582DT19A |
288Mb SigmaQuad-II TM Burst of 4 SRAM
|
GSI Technology
|
| GS8182Q18D-200 GS8182Q18D-200I GS8182Q18D-167 GS81 |
18Mb Burst of 2 SigmaQuad-II SRAM
|
GSI[GSI Technology]
|
| GS8180Q18D-200I GS8180Q18D-100 GS8180Q18D-100I GS8 |
18Mb Burst of 2 SigmaQuad SRAM 1M X 18 STANDARD SRAM, 2.3 ns, PBGA165
18Mb Burst of 2 SigmaQuad SRAM 1M X 18 STANDARD SRAM, 3 ns, PBGA165
18Mb Burst of 2 SigmaQuad SRAM 512K X 36 STANDARD SRAM, 3 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8342Q18E-200I GS8342Q18E-300I GS8342Q09E-200I GS |
36Mb SigmaQuad-II Burst of 4 SRAM 2M X 18 STANDARD SRAM, 0.45 ns, PBGA165
36Mb SigmaQuad-II Burst of 4 SRAM 4M X 9 STANDARD SRAM, 0.45 ns, PBGA165
36Mb SigmaQuad-II Burst of 4 SRAM 4M X 8 STANDARD SRAM, 0.45 ns, PBGA165
36Mb SigmaQuad-II Burst of 4 SRAM 1M X 36 STANDARD SRAM, 0.45 ns, PBGA165
36Mb SigmaQuad-II Burst of 4 SRAM 4M X 9 STANDARD SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8662Q18GE-250I GS8662Q18E-250I GS8662Q36E-200 GS |
72Mb SigmaQuad-II Burst of 2 SRAM 4M X 18 STANDARD SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 2 SRAM 2M X 36 STANDARD SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 2 SRAM 8M X 8 STANDARD SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 2 SRAM 8M X 8 STANDARD SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8180DV18D-133I GS8180DV18D-200I GS8180DV18D-250 |
18Mb Burst of 4 SigmaQuad SRAM 1M X 18 STANDARD SRAM, 3 ns, PBGA165
18Mb Burst of 4 SigmaQuad SRAM 1M X 18 STANDARD SRAM, 2.3 ns, PBGA165
18Mb Burst of 4 SigmaQuad SRAM 1M X 18 STANDARD SRAM, 2.1 ns, PBGA165
|
GSI Technology, Inc.
|
| MT49H32M9CFM-XX MT49H16M18C MT49H16M18CFM-XX MT49H |
288Mb SIO REDUCED LATENCY(RLDRAM II)
|
MICRON[Micron Technology]
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| M36P0R8070E0 M36P0R8070E0ZACE M36P0R8070E0ZACF |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
| AS7C33256PFS18A-166TQI AS7C33256PFS16A AS7C33256PF |
3.3V 256K x 16/18 pipeline burst synchronous SRAM
3.3V 256K×18 Ppipeline Burst Synchronous SRAM(3.3V 256K×18流水线脉冲同步静态RAM) 3.3 256K × 18 Ppipeline突发同步SRAM的电压（3.3V 256K × 18流水线脉冲同步静态内存）
3.3V 256K 】 16/18 pipeline burst synchronous SRAM
3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 133MHz
3.3V 256K × 16/18 pipeline burst synchronous SRAM
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor ...
|
| K4C89183AF K4C89083AF-GIFB K4C89083AF-AIFB K4C8909 |
288Mb x18 Network-DRAM2 Specification 288Mb x18网络DRAM2规范
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 250V; Case Size: 12.5x20 mm; Packaging: Bulk
JT 55C 55#22M PIN PLUG
JT 8C 8#16 PIN PLUG
Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:2200V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes
JT 55C 55#22 SKT PLUG
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
