| PART |
Description |
Maker |
| IHW20N120R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW15N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW15N120R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N90R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N160R2 |
TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode
|
Infineon Technologies AG
|
| CRD5AS-12B-T13B00 |
Reverse Conducting Thyristor Medium Power Use
|
Renesas Electronics Corporation
|
| 5SHX06F6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX03D6004 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX26L4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor 1590 A, 4500 V, SCR
|
The ABB Group
ABB, Ltd.
|
| STGP7NB60F STGD7NB60FT4 STGD7NB60F |
14 A, 600 V, N-CHANNEL IGBT, TO-220AB
Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:MS-013; Reel Quantity:1500; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:70pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA
N-CHANNEL 7A 600V TO-220/DPAK POWERMESH IGBT
N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| TISP5070H3BJ TISP5070H3BJR TISP5070H3BJR-S TISP5XX |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solutions
|
