PART |
Description |
Maker |
1214-32L |
Pulsed Power L-Band (Si)
|
Microsemi
|
2731-200P |
Pulsed Power S-Band (Si)
|
Microsemi
|
1214-150L |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-370M |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-700P |
Pulsed Power L-Band (Si)
|
Microsemi
|
TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦,50伏特,脉冲航空电601215兆赫 TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR 350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc. Microsemi, Corp. ETC[ETC] List of Unclassifed Manufacturers
|
RFHA1023 |
225W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
MAPG-S22729-350L00 MAPG-002729-350L00 |
S-Band 350 W Radar Pulsed Power GaN Pallet
|
M/A-COM Technology Solu...
|
HVV1011-300 HVV1011-300-EK |
L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50μs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50レs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications
|
HVVi Semiconductors, Inc.
|
HVV0912-150 HVV0912-150-EK |
L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10レs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
|
HVVi Semiconductors, Inc.
|
1214-700P |
700 Watts - 300楼矛s, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz 700 Watts - 300μs, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
PH2729-110M PH2729-11OM |
Radar Pulsed Power Transistor锛?110W Radar Pulsed Power Transistor/ IlOW/ loops Pulse/ 10% Duty 2.7 - 2.9 GHz Radar Pulsed Power Transistor, 110W, 100us Pulse, 10% Duty 2.7 - 2.9 GHz
|
Tyco Electronics
|
|