PART |
Description |
Maker |
2729-125 |
Pulsed Power S-Band (Si)
|
Microsemi
|
2729-170 |
Pulsed Power S-Band (Si)
|
Microsemi
|
1214-800P |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-110V |
Pulsed Power L-Band (Si)
|
Microsemi
|
2731-100M |
Pulsed Power S-Band (Si)
|
Microsemi
|
RFHA1020 |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
RFHA1027 |
500W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation Microsemi, Corp.
|
TCS1200 |
1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR 300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp. Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
|