| PART |
Description |
Maker |
| 1214GN-550V |
GaN Transistors
|
Microsemi
|
| 0912GN-650V |
GaN Transistors
|
Microsemi
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| GM20022010D |
GaN MMIC
|
RFHIC
|
| DDB-KJS-M2 DDB-KJS DDB-KJS-L1 DDB-KJS-L2 DDB-KJS-L |
LED GaN
|
DOMINANT[DOMINANT Semiconductors]
|
| GM20022005D |
GaN MMIC
|
RFHIC
|
| CGH40035F-AMP |
35 W, RF Power GaN HEMT
|
Cree, Inc
|
| PDU-G101A |
UV Enhanced GaN Detectors
|
Advanced Photonix, Inc.
|
| GX3442 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| GP2001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| PDU-G101A |
UV Enhanced GaN Detectors
|
Advanced Photonix
|
|
