PART |
Description |
Maker |
GS882Z18AB-250 GS882Z18AB-133 GS882Z18AD-133 GS882 |
250MHz 5.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM 133MHz 8.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM 166MHz 7ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM 200MHz 6.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM 200MHz 6.5s 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
IDT71V65603 IDT71V65803S150PFI IDT71V65803S150BQI |
256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs 256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs 256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs From old datasheet system 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs
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IDT[Integrated Device Technology]
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AS7C33512PFS16A |
3.3V 512K x 16/18 pipeline burst synchronous SRAM 3.3V 512K×16 Pipeline Burst Synchronous SRAM(3.3V 512K×16流水线脉冲同步静态RAM) 3.312k × 16管道爆裂同步SRAM的电压(3.3V12k × 16流水线脉冲同步静态内存)
|
Alliance Semiconductor, Corp.
|
MCM63P837ZP200R MCM63P919ZP200R MCM63P837ZP200 MCM |
512K X 18 CACHE SRAM, 3 ns, PBGA119 512K X 18 CACHE SRAM, 2.6 ns, PBGA119 256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
FREESCALE SEMICONDUCTOR INC Motorola, Inc
|
HY57V281620HCT-6 HY57V281620HCT-7 HY57V281620HCT-K |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz 4 Banks x 2M x 16bits Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
|
AS7C33512NTD18A AS7C33512NTD18A.V.2.1 AS7C33512NTD |
3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD 512K X 18 ZBT SRAM, 4 ns, PQFP100 3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD 512K X 18 ZBT SRAM, 4.5 ns, PQFP100 From old datasheet system NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
IS42S16100A1-10T |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
|
Integrated Silicon Solution, Inc.
|
IDT70V7339S IDT70V7339S200BFI IDT70V7339S133DD IDT |
HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V的为512k × 18 SYNCHRONOU开户银行可切换双端口静态RAM.5V的接 HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 512K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 512K X 18 DUAL-PORT SRAM, 10 ns, PQFP144
|
Integrated Device Technology, Inc.
|
K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V CONNECTOR ACCESSORY 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
AS7C33512PFS32_36A AS7C33512PFS36A-166TQIN AS7C335 |
3.3V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.8 ns, PQFP100 Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
IS61VPD102418A-250TQ IS61VPD102418A-250TQI IS61VPD |
512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
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