| PART |
Description |
Maker |
| SMJ27C256-20JM SMJ27C256 SMJ27C256-25JM SMJ27C256- |
256K UVEPROM
|
Advanced Semiconductor, Inc.
Austin Semiconductor
|
| 27C4096 W27C4096 W27C4096-12 W27C4096P-15 W27C4096 |
256K X 16 ELECTRICALLY ERASABLE EPROM
256K ′ 16 ELECTRICALLY ERASABLE EPROM
From old datasheet system
|
Winbond Electronics
WINBOND[Winbond]
|
| W27E020 W27E020-12 W27E020-70 W27E020-90 W27E020P- |
256K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| SMJ27C040 |
UVEPROM
|
Austin Semiconductor
|
| PLDC18G8-15DMB PLDC18G8-20DMB PLDC18G8-15QMB PLDC1 |
UV-Erasable/OTP PLD UV-Erasable/OTP可编程逻辑器件
Inductorless 5V to -5V Converter; Package: PDIP; No of Pins: 8; Temperature Range: -40°C to 85°C UV-Erasable/OTP可编程逻辑器件
|
Samsung Semiconductor Co., Ltd.
Foxconn Technology Co., Ltd.
Cypress Semiconductor, Corp.
Mitsubishi Electric, Corp.
|
| 24C256 24C128 |
CMOS I2C 2-WIRE BUS 128K/256K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 16K/32K X 8 BIT EEPROM
|
List of Unclassifed Man...
ETC[ETC]
List of Unclassifed Manufacturers
|
| GS880E32AT-250 |
512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS880V36BT-250 GS880V18BT-333 GS880V18BT-250 GS880 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 5 ns, PQFP100
|
GSI Technology, Inc.
http://
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| LC867120 |
8-Bit Single Chip Microcontroller with the UVEPROM
|
Sanyo Electric Co.,Ltd.
|
| ATV750B-15KM/883 ATV750BL-15KM/883 ATV750B-25KI AT |
UV-Erasable/OTP Complex PLD UV-Erasable/OTP复杂可编程逻辑器件
|
Atmel, Corp.
|
| ATV750B-25DI ATV750B-25DC ATV750B-7DC ATV750BQL-25 |
UV-Erasable/OTP Complex PLD UV-Erasable/OTP复杂可编程逻辑器件
|
Atmel, Corp.
|
