| PART |
Description |
Maker |
| 2N7002PV |
60 V, 350 mA N-channel Trench MOSFET
60 V, 350 mA dual N-channel Trench MOSFET
|
NXP Semiconductors
|
| 2N7002BK |
60 V, 350 mA N-channel Trench MOSFET
|
Nexperia
|
| CMP350-9601 CMP350-9603 CMP350 CMP350-9602 CMP350- |
4-OUTPUT 350 W AC-DC REG PWR SUPPLY MODULE
Quad output 350 Watt AC/DC high wattage power supplies with PFC
|
ARTESYN[Artesyn Technologies]
|
| NX2301P |
20 V, 2 A P-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., L...
|
| RA03M3540MD RA03M3540MD10 RA03M3540MD-101 |
RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
350 MHz - 400 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
| NGB8206NT4 NGB8206NT4G NGB8206NG NGB8206N |
Ignition IGBT 20 A, 350 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| SCVP0535N2 |
200 mA, 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
|
SUPERTEX INC
|
| FDB3682_FDP3682 FDB3682 FDP3682 |
N-Channel UltraFET Trench MOSFET 100V, 32A, 36mOhm
N-Channel UltraFET Trench MOSFET 100V, 32A, 36m Ohm
From old datasheet system
|
Fairchild Semiconductor
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| ISL9N308AD3 ISL9N308AD3ST ISL9N308AD3STNL |
N-Channel Logic Level UltraFET R Trench Power MOSFETs 30V, 50A, 8mOhm
N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mз 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mз 50 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
