| PART |
Description |
Maker |
| BISS0001A |
Infrared sensing signal processor
|
SHENZHEN FUMAN ELECTRON...
|
| SX8725SWLTDT |
ZoomingADC for sensing data acquisition ADVANCED COMMUNICATIONS & SENSING
|
Semtech Corporation
|
| TC9243APG TC9243AFG |
Infrared Remote-Control Signal Transmission LSI
|
http://
Toshiba Semiconductor
|
| FXLA102 FXLA102L8X |
Low Voltage Dual Supply 2-Bit Voltage Translator with Configurable Voltage Supplies and Signal Levels, 3-State Outputs, and Auto Direction Sensing
|
Fairchild Semiconductor
|
| CXA3668N |
Reception Analog Signal Processor IC for Infrared Space Digital Audio Communication
|
Sony Corporation
|
| MC34064D-5R2 MC34064-D |
Undervoltage Sensing Circuit
Under voltage Sensing Circuit
|
On Semiconductor
|
| IDT70V05L15GI IDT70V05L20GI IDT70V05L35GI IDT70V05 |
8K x 8 3.3v Dual-Port RAM
Part Sensing Light Screen; Light Curtain Type:Parts Sensing; Control Output Type:NPN & PNP; Protection Height:67mm; Sensing Range Max:2m; Supply Voltage Max:30VDC; Sensing Range Min:150mm; Supply Voltage:30VDC
High Speed JFET-Input Quad Operational Amplifier 14-CDIP -55 to 125
Dual OpAmp With Internal Reference 8-SOIC -40 to 105
20V N & P-Channel PowerTrench MOSFETs
HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM 8K X 8 DUAL-PORT SRAM, 35 ns, CPGA68
HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM 8K X 8 DUAL-PORT SRAM, 55 ns, PQFP64
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT
|
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
| F5D3 F5D1 F5D2 |
AIGAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
QT[QT Optoelectronics]
|
