| PART |
Description |
Maker |
| FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FRM5N141GT |
InGaAs-APD/Preamp Receiver
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FRM5N141GW |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| FRM5N143DS |
InGaAs-APD/Preamp Receiver
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| G8931-04 |
InGaAs APD
|
Hamamatsu Corporation
|
| C30659-900-R8A C30659 C30659-1060-3A C30659-1060-R |
Silicon and InGaAs APD Preamplifier Modules
|
PerkinElmer Optoelectro...
PERKINELMER[PerkinElmer Optoelectronics]
|
| G8925-24 G8925 G8925-21 G8925-22 G8925-23 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| FRM5J141GW |
InGaAs-PIN/Preamp Receiver
|
Eudyna Devices Inc
|
| G10342-54 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics
|
| NR8501FR-CB-AZ NR8501 NR8501CP-BC-AZ NR8501CP-CC-A |
NECs 50 μm InGaAs APD IN COAXIAL PACKAGE FOR 2.5Gb/s APPLICATIONS
|
CEL[California Eastern Labs]
|
