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Datasheet File OCR Text: |
Power Transistors 2SB947, 2SB947A Silicon PNP epitaxial planar type For low-voltage switching s Features 0.70.1 Unit: mm 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB947 2SB947A 2SB947 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25C) Ratings -40 -50 -20 -40 -5 -15 -10 35 2 150 -55 to +150 Unit 16.70.3 14.00.5 V emitter voltage 2SB947A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W C C Solder Dip 4.0 7.50.2 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB947 2SB947A 2SB947 2SB947A (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT Cob ton tstg tf IC = -2A, IB1 = -66mA, IB2 = 66mA Conditions VCB = -40V, IE = 0 VCB = -50V, IE = 0 VEB = -5V, IC = 0 IC = -10mA, IB = 0 VCE = -2V, IC = - 0.1A VCE = -2V, IC = -2A IC = -7A, IB = - 0.23A IC = -7A, IB = - 0.23A VCE = -10V, IC = - 0.5A, f = 10MHz VCB = -10V, IE = 0, f = 1MHz 150 200 0.1 0.5 0.1 -20 -40 45 90 260 - 0.6 -1.5 V V MHz pF s s s min typ max -50 -50 -50 Unit A A V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC -- Ta 50 -12 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C -10 IB=-160mA -100mA -8 -80mA 2SB947, 2SB947A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -10 VCE(sat) -- IC IC/IB=30 Collector power dissipation PC (W) Collector current IC (A) 40 -3 -1 TC=100C 25C -25C 30 -6 -60mA -40mA - 0.3 20 (1) -4 -30mA -20mA - 0.1 10 (3) (4) 0 0 20 40 60 (2) -2 -10mA - 0.03 0 80 100 120 140 160 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 - 0.3 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -10 hFE -- IC IC/IB=30 10000 VCE=-2V 10000 3000 1000 300 100 30 10 3 fT -- IC VCE=-10V f=10MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE -3 1000 300 100 30 10 3 1 - 0.1 - 0.3 TC=100C 25C -1 TC=-25C 100C 25C - 0.3 -25C - 0.1 - 0.03 - 0.01 - 0.1 Transition frequency fT (MHz) -10 -30 -100 3000 - 0.3 -1 -3 -10 -1 -3 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 10 f=1MHz TC=25C ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=30 (-IB1=IB2) VCC=-20V TC=25C Area of safe operation (ASO) -100 -30 Non repetitive pulse TC=25C ICP IC 10ms -3 -1 DC t=1ms Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 - 0.1 - 0.3 Switching time ton,tstg,tf (s) 3 Collector current IC (A) -10 1 tstg 0.3 ton 0.1 tf 0.03 - 0.3 - 0.1 - 0.03 0.01 -1 -3 -10 -30 -100 0 -1 -2 -3 -4 -5 -6 -7 -8 - 0.01 - 0.1 - 0.3 -1 -3 -10 -30 2SB947A -100 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 2SB947 Power Transistors Rth(t) -- t 103 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) 2SB947, 2SB947A Thermal resistance Rth(t) (C/W) 102 10 (2) 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
Price & Availability of 2SB947
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