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| Power Transistors 2SB949, 2SB949A Silicon PNP epitaxial planar type Darlington 0.70.1 For power amplification and switching Complementary to 2SD1275 and 2SD1275A 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 Unit: mm q q 16.70.3 q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings -60 -80 -60 -80 -5 -4 -2 35 2 150 -55 to +150 Unit V 7.50.2 s Features 3.10.1 14.00.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB949 2SB949A 2SB949 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 4.0 1.40.1 1.30.2 Solder Dip 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 emitter voltage 2SB949A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W C C B 1 2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) 3 Internal Connection C s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB949 2SB949A 2SB949 2SB949A 2SB949 2SB949A E (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf * Conditions VCB = -60V, IE = 0 VCB = -80V, IE = 0 VCB = -30V, IB = 0 VCB = -40V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -4V, IC = -1A VCE = -4V, IC = -2A VCE = -4V, IC = -2A IC = -2A, IB = -8mA VCE = -10V, IC = - 0.5A, f = 1MHz IC = -2A, IB1 = -8mA, IB2 = 8mA, VCC = -50V min typ max -1 -1 -2 -2 -2 Unit mA mA mA V -60 -80 1000 2000 10000 -2.8 -2.5 20 0.4 1.5 0.5 Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 V V MHz s s s Rank classification Q P 2000 to 5000 4000 to 10000 Rank hFE2 1 Power Transistors PC -- Ta 50 -5 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C IB=-2.0mA -1.8mA -1.6mA -1.4mA -1.2mA -1.0mA - 0.8mA - 0.6mA -2 - 0.4mA 2SB949, 2SB949A IC -- VCE -10 VCE=-4V IC -- VBE Collector power dissipation PC (W) Collector current IC (A) 30 -3 Collector current IC (A) 40 -4 -8 -6 25C -4 TC=100C -25C 20 (1) 10 (3) (4) 0 0 20 40 60 (2) -1 - 0.2mA - 0.1mA -2 0 80 100 120 140 160 0 -1 -2 -3 -4 -5 0 0 - 0.8 -1.6 -2.4 -3.2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=250 -30 -10 -3 -1 TC=100C -25C 25C 105 hFE -- IC 10000 Cob -- VCB Collector output capacitance Cob (pF) VCE=-4V IE=0 f=1MHz TC=25C Forward current transfer ratio hFE 3000 1000 300 100 30 10 3 1 - 0.1 - 0.3 104 TC=100C 25C -25C 103 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 102 -1 -3 -10 10 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) -100 -30 103 Non repetitive pulse TC=25C Rth(t) -- t (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) Thermal resistance Rth(t) (C/W) Collector current IC (A) 102 -10 ICP -3 IC -1 DC t=1ms 10ms 10 (2) - 0.3 - 0.1 - 0.03 - 0.01 -1 1 2SB949A 10-1 2SB949 -3 -10 -30 -100 -300 -1000 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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