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Power Transistors 2SB952, 2SB952A Silicon PNP epitaxial planar type For low-voltage switching 10.00.3 1.50.1 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C) Ratings -40 -50 -20 -40 -5 -12 -7 30 1.3 150 -55 to +150 Unit V 1.5max. 1.1max. 10.5min. 2.0 0.80.1 0.5max. 2.540.3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB952 2SB952A 2SB952 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 5.080.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.40.3 1.00.1 8.50.2 6.00.3 emitter voltage 2SB952A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V 14.70.5 4.40.5 0 to 0.4 V A A W 10.00.3 1.5-0.4 4.40.5 2.0 0.80.1 2.540.3 R0.5 R0.5 1.1 max. 5.080.5 C C 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB952 2SB952A 2SB952 2SB952A (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT Cob ton tstg tf IC = -2A, IB1 = -66mA, IB2 = 66mA Conditions VCB = -40V, IE = 0 VCB = -50V, IE = 0 VEB = -5V, IC = 0 IC = -10mA, IB = 0 VCE = -2V, IC = - 0.1A VCE = -2V, IC = -2A IC = -5A, IB = - 0.16A IC = -5A, IB = - 0.16A VCE = -10V, IC = - 0.5A, f = 10MHz VCB = -10V, IE = 0, f = 1MHz 150 140 0.1 0.5 0.1 -20 -40 45 90 260 - 0.6 -1.5 V V MHz pF s s s min typ max -50 -50 -50 Unit A A V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 3.0-0.2 +0.4 +0 1 Power Transistors PC -- Ta 40 -6 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) IB=-60mA -5 TC=25C -50mA -45mA -40mA -35mA -30mA -3 -25mA -20mA -2 -15mA -10mA -1 -5mA 0 0 20 40 60 80 100 120 140 160 0 -1 -2 -3 -4 -5 -6 2SB952, 2SB952A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -10 VCE(sat) -- IC IC/IB=30 TC=100C -3 25C -1 -25C Collector power dissipation PC (W) 30 Collector current IC (A) (1) -4 20 - 0.3 - 0.1 10 (2) (3) 0 - 0.03 - 0.01 - 0.1 - 0.3 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -10 IC/IB=30 10000 hFE -- IC 10000 VCE=-2V 3000 1000 300 100 30 10 3 fT -- IC VCE=-10V f=10MHz TC=25C Forward current transfer ratio hFE -3 1000 300 100 30 10 3 1 - 0.1 - 0.3 TC=100C 25C -1 TC=-25C 100C - 0.3 25C -25C - 0.1 - 0.03 - 0.01 - 0.1 Transition frequency fT (MHz) -10 -30 -100 3000 - 0.3 -1 -3 -10 -1 -3 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 -10 IE=0 f=1MHz TC=25C ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=30 (-IB1=IB2) VCC=-20V TC=25C Area of safe operation (ASO) -100 -30 Non repetitive pulse TC=25C ICP -10 IC -3 -1 10ms 300ms t=1ms Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 - 0.1 - 0.3 Switching time ton,tstg,tf (s) -3 -1 tstg ton tf - 0.3 - 0.1 Collector current IC (A) - 0.3 - 0.1 - 0.03 - 0.01 -1 -3 -10 -30 -100 0 -1 -2 -3 -4 -5 -6 -7 -8 - 0.01 - 0.1 - 0.3 -1 -3 -10 2SB952 - 0.03 -30 2SB952A -100 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 103 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10 2SB952, 2SB952A Thermal resistance Rth(t) (C/W) 102 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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