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| Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 6.90.1 0.15 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 0.7 4.0 s Features q q 0.65 max. 1.0 1.0 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings 500 400 7 1.5 0.8 1 150 -55 ~ +150 1cm2 Unit 0.45-0.05 0.45-0.05 +0.1 +0.1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 2.50.5 1 2 2.50.5 3 V V A A W C C 1.20.1 0.65 max. 0.45+0.1 - 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board 2.50.1 V (HW type) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fill time (Ta=25C) Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 10mA VCE = 5V, IC = 300mA*1 IC = 100mA, IB = 10mA*1 IC = 100mA, IB = 10mA*1 VCB = 10V, IE = -50mA, f = 10MHz IC = 200mA, IB1 = 40mA IB2 = -40mA, VCC = 150V 50 10 0.1 0.8 20 0.7 4.0 0.4 *1 min typ max 100 100 300 14.50.5 Unit A A 0.5 1.0 V V MHz s s s Pulse measurement 1 Transistor PC -- Ta 1.2 120 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C 100 IB=1.0mA 0.9mA 80 0.8mA 0.7mA 0.6mA 60 0.5mA 0.4mA 40 0.3mA 0.2mA 0.1mA 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 2SC5018 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 Ta=75C 1 25C 0.3 -25C 0.1 0.03 0.01 0.01 0.03 VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (W) 1.0 0.8 0.6 0.4 0.2 Collector current IC (mA) 20 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=10 200 VCE=5V Base to emitter saturation voltage VBE(sat) (V) 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C 25C Forward current transfer ratio hFE 160 Ta=75C 25C 120 -25C 80 40 0.1 0.3 1 3 10 0 0.001 0.003 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) 2 |
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