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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. The transistors are encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes. PINNING PIN 1 2 3 4 1 2 3 4 1 2 3 4
BFG520; BFG520/X; BFG520/XR
DESCRIPTION collector base emitter emitter
fpage
4
3
BFG520 (Fig.1) Code: N36
1 Top view 2
MSB014
BFG520/X (Fig.1) Code: N42 collector emitter base emitter collector emitter base emitter
Fig.1 SOT143B.
handbook, 2 columns 3
4
BFG520/XR (Fig.2) Code: N48
2 Top view 1
MSB035
Fig.2 SOT143R.
QUICK REFERENCE DATA SYMBOL VCBO VCEO Ic Ptot hFE Cre fT GUM PARAMETER collector-base voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 88 C; note 1 IC = 20 mA; VCE = 6 V; Tj = 25 C IC = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C S212 F insertion power gain noise figure IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt ; Ic = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt ; IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt ; IC = 5 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C September 1995 2 collector-emitter voltage open base CONDITIONS open emitter - - - - 60 - - - - 17 - - - MIN. - - - - 120 0.3 9 19 13 18 1.1 1.6 1.9 TYP. MAX. 20 15 70 300 250 - - - - - 1.6 2.1 - pF GHz dB dB dB dB dB dB UNIT V V mA mW
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature
BFG520; BFG520/X; BFG520/XR
CONDITIONS open emitter open base open collector up to Ts = 88 C; note 1 - - - - -
MIN.
MAX. 20 15 2.5 70 300 150 175 V V V
UNIT
mA mW C C
-65 -
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 88 C; note 1 THERMAL RESISTANCE 290 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1)
BFG520; BFG520/X; BFG520/XR
CONDITIONS IE = 0; VCB = 6 V IC = 20 mA; VCE = 6 V IC = ic = 0; VEB = 0.5 V; f = 1 MHz IE = ie = 0; VCB = 6 V; f = 1 MHz IC = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C
MIN. - 60 - - - - - - 17 - - - - - - - -
TYP. 120 1 0.6 0.3 9 19 13 18 1.1 1.6 1.9 17 26 275 -50
MAX. 50 250 - - - - - - - 1.6 2.1 - - - - -
UNIT nA pF pF pF GHz dB dB dB dB dB dB dBm dBm mV dB
S212 F
insertion power gain noise figure
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C
PL1 ITO Vo d2 Notes
output power at 1 dB gain compression third order intercept point output voltage second order intermodulation distortion
IC = 20 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C note 2 note 3 IC = 20 mA; VCE = 6 V; Vo = 75 mV; Tamb = 25 C; f(p+q) = 810 MHz
1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 G UM = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22 2. IC = 20 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at f(2p-q) = 898 MHz and f(2q-p) = 904 MHz. 3. dim = -60 dB (DIN 45004B); Vp = Vo; Vq = Vo -6 dB; Vr = Vo -6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz
September 1995
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
handbook, halfpage
400
MRA670-1
handbook, halfpage
250
MRA671
Ptot (mW) 300
hFE 200
150 200 100 100 50
0 0 50 100 150 Ts (oC) 200
0 10-2
10-1
1
10
IC (mA)
102
VCE = 6 V; Tj = 25 C.
Fig.3 Power derating curve.
Fig.4
DC current gain as a function of collector current.
handbook, halfpage
0.6
MRA672
handbook, halfpage
12
MRA673
Cre (pF) 0.4
fT (GHz) 8
VCE = 6 V
VCE = 3 V
0.2
4
0 0 4 8 VCB (V) 12
0 10-1
1
10
IC (mA)
102
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 C.
Fig.5
Feedback capacitance as a function of collector-base voltage.
Fig.6
Transition frequency as a function of collector current.
September 1995
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
In Figs 7 to 10, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain.
BFG520; BFG520/X; BFG520/XR
handbook, halfpage
25
MRA674
handbook, halfpage
25
MRA675
gain (dB) 20
Gmax MSG GUM
gain (dB) 20
15 15
MSG
10
Gmax GUM
10
5 5
0 0 0 10 20 IC (mA) 30 VCE = 6 V; f = 2 GHz; Tamb = 25 C. VCE = 6 V; f = 900 MHz; Tamb = 25 C. 0 10 20 IC (mA) 30
Fig.7 Gain as a function of collector current.
Fig.8 Gain as a function of collector current.
MRA676
MRA677
handbook, halfpage
50
handbook, halfpage
50
gain (dB) 40
GUM
gain (dB) 40 GUM
MSG 30 30 MSG
20 Gmax
20 Gmax 10
10
0 10
102
103
f (MHz)
104
0 10
102
103
f (MHz)
104
IC = 5 mA; VCE = 6 V; Tamb = 25 C.
IC = 20 mA; VCE = 6 V; Tamb = 25 C.
Fig.9 Gain as a function of frequency.
Fig.10 Gain as a function of frequency.
September 1995
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
handbook, halfpage
-20 dim
MEA975
handbook, halfpage
-20 d2
MEA974
(dB) -30
(dB) -30
-40
-40
-50
-50
-60
-60
-70
0
10
20
30
40
50 IC (mA)
-70
0
10
20
30
40
50 IC (mA)
Fig.11 Intermodulation distortion as a function of collector current.
Fig.12 Second order intermodulation distortion as a function of collector current.
handbook, halfpage
5
MRA682
Fmin (dB) 4 Gass
f = 900 MHz 1000 MHz
20 Gass (dB) 15
handbook, halfpage
5
MRA683
Fmin (dB) 4
IC = 5 mA
20 mA Gass
20 Gass (dB) 15
2000 MHz 3 2000 MHz 2 1000 MHz 1 900 MHz 500 MHz 0 1 10 IC (mA) -5 102 0 102 103 -5 104 Fmin 0 1 5 2 20 mA 5 mA Fmin 5 10 3 10
0
f (MHz)
V CE = 6 V; Tamb = 25 C.
VCE = 6 V; Tamb = 25 C.
Fig.13 Minimum noise figure and associated available gain as functions of collector current.
Fig.14 Minimum noise figure and associated available gain as functions of frequency.
September 1995
7
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
handbook, full pagewidth
stability circle
90 1.0 1
135 pot. unst. region
0.5
2
45
0.8 0.6
0.2
Fmin = 1. 1 dB OPT
5
0.4 0.2
180
0
0.2
0.5
1 F = 1.5 dB F = 2 dB
2
5
0
0
0.2 F = 3 dB
5
-135
0.5 1
2
-45
MRA684
1.0
-90 IC = 5 mA; VCE = 6 V; f = 900 MHz; Zo = 50 .
Fig.15 Noise circle figure.
handbook, full pagewidth
90 1.0 1 135 0.5 F = 3 dB F = 2.5 dB 0.2 Gmax = 13 dB 180 0 MS 0.2 G = 12 dB 0.2 G = 11 dB G = 10 dB 5 F = 2 dB OPT Fmin = 1. 9 dB 0.5 1 2 5 0 5 2 45 0.8 0.6 0.4 0.2 0
-135
0.5 1
2
-45
MRA685
1.0
-90 IC = 5 mA; VCE = 6 V; f = 2 GHz; Zo = 50 .
Fig.16 Noise circle figure.
September 1995
8
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 3 GHz 0.2 5 0.4 0.2 180 0 0.2 0.5 1 2 5 40 MHz 0.2 5 0 0
-135
0.5 1
2
-45
MRA678
1.0
-90 IC = 20 mA; VCE = 6 V. Zo = 50 .
Fig.17 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90
135
45
40 MHz
180 50 40 30 20 10
3 GHz
0
-135
-45
-90 IC = 20 mA; VCE = 6 V.
MRA679
Fig.18 Common emitter forward transmission coefficient (S21).
September 1995
9
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
handbook, full pagewidth
90
135
45
3 GHz
180 0.25
40 MHz
0.20 0.15 0.10 0.05
0
-135
-45
-90 IC = 20 mA; VCE = 6 V.
MRA680
Fig.19 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 0 0
0.2
5
40 MHz
0.2
3 GHz
5
-135
0.5 1
2
-45
MRA681
1.0
-90 IC = 20 mA; VCE = 6 V. Zo = 50 .
Fig.20 Common emitter output reflection coefficient (S22).
September 1995
10
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
PACKAGE OUTLINES Plastic surface mounted package; 4 leads
BFG520; BFG520/X; BFG520/XR
SOT143B
D
B
E
A
X
y vMA HE
e bp wM B
4
3
Q
A
A1 c
1
b1 e1
2
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
September 1995
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
D
B
E
A
X
y vMA HE
e bp wM B
3
4
Q
A
A1 c
2
b1 e1
1
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.55 0.25 Q 0.45 0.25 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143R
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-03-10
September 1995
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFG520; BFG520/X; BFG520/XR
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1995
13

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