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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2002.10.24 Page No. : 1/3 HBAT54\A\C\S Description Silicon Schottky Barrier Double Diodes Features These diodes feature very low turn-on voltage and fast switching. There is a PN junction guard ring against excessive voltage such as electronics attic discharges protects these devices. SOT-23 Absolute Maximum Ratings * Maximum Temperatures Storage Temperature .............................................................................................. -65~+125 C Junction Temperature .................................................................................................... +125 C * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ................................................................................ 230 mW * Maximum Voltages and Currents (Ta=25C) Repetitive Peak Reverse Voltage ........................................................................................ 30 V Forward Continuous Current .......................................................................................... 200 mA Repetitive Peak Forward Current .................................................................................. 300 mA Surge Forward Current (tp<1s)....................................................................................... 600 mA Characteristics (Ta=25C) Characteristic Reverse breakdown Voltage Symbol V(BR)R VF(1) VF(2) VF(3) VF(4) VF(5) IR CT Trr Condition IR=10uA IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=25V VR=1V, f=1MHz IF=IR=10mA RL=100 measured at IR=1mA Min. 30 Max. 240 320 400 500 1000 2.0 10 5 Unit V mV mV mV mV mV uA pF nS Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time HBAT54, HBAT54A, HBAT54C, HBAT54S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Forward Current & Forward Voltage 250 Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2002.10.24 Page No. : 2/3 Diode Capacitance & Reverse-Biased Voltage 100 200 150 Diode Capacitance-Cd (pF) 0 200 400 600 800 1000 Forward Current-IF (mA) 10 100 50 0 1 0.1 1 10 100 Forward Voltage-VF (mV) Reverse Biased Voltage-VR (V) HBAT54, HBAT54A, HBAT54C, HBAT54S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-23 Dimension Diagram: L 3 3 Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2002.10.24 Page No. : 3/3 A Marking: 3 BS 1 V G 2 1 2 1 2 L4 HBAT54 3 HBAT54A 3 1 2 1 2 Product Code Control Code HBAT54C HBAT54S 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N C D H K J Style: Pin 1.Anode 2.Cathode 3.Common Connection * HBAT54: Single Diode , also available as double diodes. (Marking Code L4) * HBAT54A: Common Anode. (Marking Code L42) * HBAT54C: Common Cathode. (Marking Code L43) * HBAT54S: Series Connected. (Marking Code L44) *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBAT54, HBAT54A, HBAT54C, HBAT54S HSMC Product Specification |
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