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| Infrared Light Emitting Diodes LNA2701L GaAs Bi-directional Infrared Light Emitting Diode 8 8 Unit : mm For light source of VCR (VHS System) 0.5 max. Features Two-way directivity High-power output, high-efficiency : PO = 1.8 mW (min.) Small resin package Long lifetime, high reliability Thin type package modified from LN59 2.80.2 2-C0.5 8 26 .5 3.80.2 2.40.2 0.8 o1.40.2 8 8 1.0 26 .5 16.91.0 Not soldered 2.0 0.8 2.80.2 1.30.2 8 2-R0.7 8 0.15 2-0.7 max. 2-0.50.1 (1.5) Applications Light source for tape end sensor of VCR and video camera recorder of VHS system Light source for 2-bit photo sensor 0.50.1 2 1 2.0 1: Anode 2: Cathode Absolute Maximum Ratings (Ta = 25C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1 3 -25 to +65 - 30 to +85 Unit mW mA A V C C f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Radiant intensity at center Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins * Symbol I e* P VF IR Ct Conditions IF = 50mA IF = 20mA IF = 20mA IF = 50mA VR = 3V VR = 0V, f = 1MHz min 1.2 typ 940 50 1.3 35 max Unit mW/sr nm nm 1.5 10 V A pF Radiant intensity Ie shows each value of intensity I1 and I2 in two directions. I1 I2 1 Infrared Light Emitting Diodes LNA2701L IF -- Ta 60 10 2 IFP -- Duty cycle tw = 10s Ta = 25C 80 70 IF -- VF Ta = 25C IF (mA) IFP (A) 50 10 IF (mA) Forward current 1 10 10 2 60 50 40 30 20 10 40 Allowable forward current Pulse forward current 30 1 20 10 -1 10 0 - 25 0 20 40 60 80 100 10 -2 10 -1 0 0 0.4 0.8 1.2 1.6 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) Ie -- IFP 10 2 (1) tw = 10s f = 100Hz (2) DC Ta = 25C 1.6 VF -- Ta 10 3 Ie -- Ta IF = 20mA Relative radiant intensity Ie VF (V) 10 (1) 1.2 10mA 1mA 0.8 1 (2) Relative radiant intensity Ie 120 IF = 50mA Forward voltage 10 2 10 -1 0.4 10 -2 1 10 10 2 10 3 0 - 40 0 40 80 10 - 25 0 20 40 60 80 100 Pulse forward current IFP (mA) Ambient temperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 1000 IF = 20mA 100 Spectral characteristics IF = 20mA Ta = 25C Direction light distribution characteristics 0 30 100 90 80 70 60 50 40 30 20 P (nm) 30 Relative radiant intensity (%) 980 80 60 60 90 40 120 20 150 60 Peak emission wavelength 960 90 20 30 Relative radiant 40 intensity (%) 50 60 70 80 90 150 100 940 120 920 180 900 - 40 0 40 80 120 0 860 900 940 980 1020 1060 1100 Ambient temperature Ta (C ) Wavelength (nm) 2 |
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