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| PC8171XNSZ Series PC8171X NSZ Series s Features 1. Low input current type(IF=0.5mA) 2. High resistance to noise due to high common rejection voltage (CMR:MIN. 10kV/s) 3. Compact dual-in line package 4. Isolation voltage(Viso:5kVrms) 5. Recognized by UL, file No. E64380 Low Input Current Type Photocoupler s Outline Dimensions Anode mark 1.20.3 0.60.2 (Unit : mm) 1 4 8171 2 3 s Applications 1. Programmable controllers 2. Facsimiles 3. Telephones 6.5 0.5 7.620.3 2.540.25 4.580.5 4.580.5 0.5TYP. 3.50.5 2.70.5 Model No. Rank mark PC81710NSZ A, B, C or no mark A PC81711NSZ B PC81712NSZ C PC81713NSZ A or B PC81715NSZ B or C PC81716NSZ PC81718NSZ A, B or C Ic (mA) 0.5 to 3.0 0.6 to 1.5 0.8 to 2.0 1.0 to 2.5 0.6 to 2.0 0.8 to 2.5 0.6 to 2.5 Conditions Epoxy resin 0.260.1 : 0 to 13 0.50.1 IF=0.5mA VCE=5V Ta=25C Internal connection diagram 1 4 1 2 3 2 3 4 s Absolute Maximum Ratings (Ta=25C) Unit mA mA V mW V V mA mW mW C C kVrms C Anode Cathode Emitter Collector Parameter Symbol Rating IF 10 Forward current *1 Peak forward current IFM 200 Input 6 VR Reverse voltage Power dissipation P 15 Collector-emitter voltage VCEO 70 Emitter-collector voltage VECO 6 Output 50 IC Collector current PC 150 Collector power dissipation 170 Total power dissipation Ptot Operating temperature -30 to +100 Topr -55 to +125 Tstg Storage temperature *2 Viso Isolation voltage 5 *3 260 Soldering temperature Tsol *1 Pulse width<=100s, Duty ratio=0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/ 3.00.5 s Rank Table PC8171XNSZ Series s Electro-optical Characteristics Parameter Symbol Forward voltage VF Reverse current IR Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO IC Collector current Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance tr Rise time Response time tf Fall time *1 (Ta=25C) Conditions IF=10mA VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10A, IF=0 IF=0.5mA, VCE=5V IF=10mA, IC=1mA DC500V 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100 MIN. - - - - 70 6 0.5 - 5x1010 - - - 10 TYP. 1.2 - 30 - - - - - 1x1011 0.6 4 3 - MAX. 1.4 10 250 100 - - 3.0 0.2 - 1.0 18 18 - Unit V A pF nA V V mA V pF s s kV/s Transfer characteristics Output Input Common mode rejection voltage CMR Ta=25C, RL=470, VCM=1.5kV (peak), IF=0mA, VCC=9V, Vnp=100mV *1 Refer to Fig.1. Fig.1 Test Circuit for Common Mode Rejection Voltage (dV/dt) VCM RL Vnp VCC 1) Vcp Vnp VCM VCM : High wave VO pulse (Vcp Nearly = dV/dtxCfxRL) RL=470 1) Vcp : Voltage which is generated by displacement current in floating VCC=9V capacitance between primary and secondary side. Fig.2 Forward Current vs. Ambient Temperature Fig.3 Diode Power Dissipation vs. Ambient Temperature 10 Diode power dissipation P (mW) 0 25 50 75 100 125 15 Forward current IF (mA) 10 5 5 0 -30 0 -30 0 25 50 75 100 125 Ambient temperature Ta (C) Ambient temperature Ta (C) PC8171XNSZ Series Fig.4 Collector Power Dissipation vs. Ambient Temperature Collector power dissipation PC (mW) Fig.5 Total Power Dissipation vs. Ambient Temperature Total power dissipation Ptot (mW) 200 200 170 150 150 100 100 50 50 0 -30 0 25 50 75 100 125 0 -30 0 25 50 75 100 125 Ambient temperature Ta (C) Ambient temperature Ta (C) Fig.6 Peak Forward Current vs. Duty Ratio 2000 Peak forward current IFM (mA) 1000 500 Pulse width <=100s Ta=25C Fig.7 Forward Current vs. Forward Voltage 100 Forward current IF (mA) 10 Ta=25C Ta=100C 1 Ta=75C Ta=50C Ta=0C Ta=-25C 200 100 50 20 10 5 10 -3 2 5 10 -2 2 5 10 -1 0.1 2 5 1 0 0.5 1.0 1.5 2.0 Duty ratio Forward voltage VF (V) Fig.8 Current Transfer Ratio vs. Forward Current 800 700 Current transfer ratio CTR (%) 600 500 400 300 200 100 0 0.1 VCE=5V Ta=25C Fig.9 Collector Current vs. Collector-emitter Voltage 40 Ta=25C PC (MAX.) Collector current IC (mA) 30 IF=7mA 20 IF=5mA IF=3mA IF=2mA 10 IF=1mA 0 IF=0.5mA 1 Forward current IF (mA) 10 0 2 4 6 8 10 Collector-emitter voltage VCE (V) PC8171XNSZ Series Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature 150 VCE=5V IF=0.5mA 100 Collector-emitter saturation voltage VCE (sat) (V) Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) IF=10mA IC=1mA Relative current transfer ratio (%) 50 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) Fig.12 Collector Dark Current vs. Ambient Temperature 10-5 10-6 VCE=50V Fig.13 Response Time vs. Load Resistance 1000 VCE=2V IC=2mA Ta=25C 100 Response time (s) tf td Collector dark current ICEO (A) 10-7 10-8 10-9 10-10 10-11 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) 10 tr 1 ts 0.1 0.1 1 Load resistance RL (k) 10 Fig.14 Response Time vs. Load Resistance (Saturation) 1000 VCC=5V IF=16mA Ta=25C 100 Response time (s) ts 10 tf Fig.15 Test Circuit for Response Time VCC RD Input RL Output Input Output 10% 90% td tr td ts tf 1 tr 0.1 1 10 Load resistance RL (k) 100 PC8171XNSZ Series Fig.16 Voltage Gain vs Frequency 5 Collector-emitter saturation voltage VCE (sat) (V) VCE=2V IC=2mA Ta=25C Fig.17 Collector-emitter Saturation Voltage vs. Forward Current 5 IC=7mA 4 IC=5mA IC=3mA IC=2mA 3 IC=1mA IC=0.5mA 2 Ta=25C 0 Voltage gain AV (dB) -5 -10 RL=10k 1k 100 -15 -20 -25 0.1 1 0 0 2 4 6 8 10 Forward current IF (mA) 1 10 Frequency f (kHz) 100 1000 Fig.18 Reflow Soldering Only one time soldering is recommended within the temperature profile shown below. 230C 200C 180C 25C 10s 30s 2min 1min 1min |
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