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TLP371,TLP372 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP371, TLP372 Office Machine Household Use Equipment Telecommunication Solid State Relay Programmable Controllers The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide infrared emitting diode optically coupled to a darlington connected photo-transistor which has an integrated base-emitter resistor to optimize switching speed and elevated temperature characteristics in a six lead plastic DIP package. TLP372 is no-base internal connection for high-EMI environments. Unit in mm * * * Current transfer ratio: 1000% (min) (IF = 1mA) Isolation voltage: 5000 Vrms (min) UL recognized: UL1577, file no. E67349 TOSHIBA Weight: 0.4g 11-7A8 Pin Configurations (top view) TLP371 1 2 3 1 : Anode 2 : Cathode 3 : NC 4 : Emitter 5 : Collector 6 : Base 6 5 4 1 2 3 1 : Anode 2 : Cathode 3 : NC 4 : Emitter 5 : Collector 6 : NC TLP372 6 5 4 1 2002-09-25 TLP371,TLP372 Maximum Ratings (Ta = 25C) Characteristic Forward current Forward current derating (Ta 39C) LED Peak forward current (100s pulse, 100pps) Reverse voltage Junction temperature Collector-emitter voltage Collector-base voltage (TLP371) Emitter-collector voltage Detector Emitter-base voltage (TLP371) Collector current Power dissipation Power dissipation derating (Ta 25C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Total package power dissipation Total package power dissipation derating (Ta 25C) Isolation voltage (AC, 1min., R.H. 60%) (Note 1) Symbol IF IF / C IFP VR Tj VCEO VCBO VECO VEBO IC PC PC / C Tj Tstg Topr Tsold PT PT / C BVS Rating 60 -0.7 1 5 125 300 300 0.3 7 150 300 -3.0 125 -55~125 -55~100 260 350 -3.5 5000 Unit mA mA / C A V C V V V V mA mW mW / C C C C C mW mW / C Vrms (Note 1): Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4,5 and 6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min -25 Typ. 16 Max 200 25 120 85 Unit V mA mA C 2 2002-09-25 TLP371,TLP372 Individual Electrical Characteristics (Ta = 25C) Characteristic Forward voltage LED Reverse current Capacitance Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage (TLP371) Emitter-base breakdown voltage (TLP371) Detector Collector dark current Symbol VF IR CT V(BR) CEO V(BR) ECO V(BR) CBO V(BR) EBO Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz IC = 0.1 mA IE = 0.1 mA IC = 0.1 mA IE = 0.1 mA VCE = 200 V ICEO VCE = 200 V Ta = 85 C VCE = 200 V Ta = 85 C, RBE = 10 M VCE = 200 V VCE = 5 V, IC = 10 mA V = 0, f = 1 MHz Min 1.0 300 0.3 300 7 Typ. 1.15 30 10 Max 1.3 10 200 20 Unit V A pF V V V V nA A Collector dark current (TLP371) Collector dark current (TLP371) DC forward current gain (TLP371) Capacitance (collecter to emitter) ICER ICBO hFE CCE 0.5 0.1 7000 10 10 A nA pF Coupled Electrical Characteristics (Ta = 25C) Characteristic Current transfer ratio Saturated CTR Base photo-current (TLP371) Collector-emitter saturation voltage Symbol IC / I F IC / IF (sat) IPB VCE (sat) Test Condition IF = 1 mA, VCE = 1 V IF = 10 mA, VCE = 1 V IF = 1 mA, VCB = 1 V IC = 10 mA, IF = 1 mA IC = 100 mA, IF = 10 mA MIn 1000 500 0.3 Typ. 4000 6 Max 1.0 1.2 Unit % % A V 3 2002-09-25 TLP371,TLP372 Isolation Characteristics (Ta = 25C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min 5x1010 5000 Typ. 0.8 1014 10000 10000 Max Unit pF Vrms Vdc Switching Characteristics (Ta = 25C) Characteristic Rise time Fall time Turn-on time Turn-off time Turn-on time Storage time Turn-off time Turn-on time Storage time Turn-off time Symbol tr tf ton toff tON ts tOFF tON ts tOFF RL = 180 RBE = OPEN VCC = 5 V, IF = 16 mA RL = 180 RBE = 10 M(TLP371) VCC = 10 V, IF = 16 mA (Fig.1) VCC = 10 V IC = 10 mA RL = 100 Test Condition Min (Fig.1) Typ. 40 15 50 15 3 45 90 5 40 80 Max s s s Unit Fig.1: Switching time test circuit IF VCE tON IF RBE RL VCC VCE ts VCC 9V 1V tOFF 4 2002-09-25 TLP371,TLP372 100 IF - Ta Allowable collector power dissipation PC (mW) 400 PC - Ta Allowable forward current IF (mA) 80 320 60 240 40 160 20 80 0 -20 0 20 40 60 80 100 120 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta () Ambient temperature Ta () 5000 3000 IFP - DR (mA) Pulse width 100s Ta = 25C 100 50 30 IF - VF Ta = 25C Pulse forward current IFP (mA) 1000 500 300 Forward current IF 10 5 3 100 50 30 10 1 0.5 0.3 3 10 -3 3 10 -2 3 10 -1 3 10 0 Duty cycle ratio DR 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward voltage VF (V) -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 VF / Ta - IF 1000 IFP - VFP Forword voltage temperature coefficient VF / Ta (mV / ) (mA) Pulse forward current IFP 500 300 100 50 30 10 5 3 1 0.6 Pulse width 10s Repetitive =100Hz Ta = 25C 1.0 1.4 1.8 2.2 2.6 3.0 frequency 0.3 0.5 1 3 10 30 50 Forward current IF (mA) Pulse forward voltage VFP (V) 5 2002-09-25 TLP371,TLP372 IC - VCE 140 120 10mA 4mA Ta = 25C 300 IC - IF VCE = 1.2V 1V (mA) 2mA (mA) IC 1mA 100 50 30 current IC 100 80 Collector Collector 60 40 20 0 IF = 0.5mA current 10 5 3 Ta = 25C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 0.2 0.5 1 3 10 30 50 Collector-emitter voltage VCE (V) Forward current IF (mA) Switching Time - RL 1000 500 300 t I C / IF - I F 50000 30000 Ta = 25C VCC = 10V Ta = 25C (%) IC / IF transfer raito OFF (IF = 16mA) 10000 (s) 100 50 30 t OFF (IF = 1.6mA) 5000 3000 VCE = 1.2V Switching time t 10 5 3 t ON (IF = 1.6mA) 1000 1V Current ON (IF = 16mA) 50 100 300 500 1K 5K 10K 500 300 1 30 3K 100 0.3 0.5 1 3 5 10 30 50 Load resistance RL () Forward current IF (mA) 6 2002-09-25 TLP371,TLP372 10 1 ICEO - VCE Ta = 25C 10 1 ICEO - Ta RBE = OPEN (A) (A) ICEO current current 10 0 ICEO 10 0 dark dark 10 -1 Collector RBE = 10 M TLP371 Collector VCE = 200V -2 10 10 -1 150V 80V 10 10 30 50 100 300 500 -3 0 20 40 60 80 100 Collector-emitter voltage VCE (V) Ambient temperature Ta () IC - Ta 120 VCE = 1V IF = 10mA 1.4 IC - Ta VCE = 1V (mA) 100 1.2 IC IF = 10mA 1.0 1mA 0.8 IC current 60 Collector 40 1mA Collector current 80 0.6 20 0.4 0 0.2 -20 0 20 40 60 80 100 -20 0 20 40 60 80 100 Ambient temperature Ta () Ambient temperature Ta () 7 2002-09-25 TLP371,TLP372 RESTRICTIONS ON PRODUCT USE 000707EBC * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 8 2002-09-25 |
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