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(R)
Z04 Series
4A TRIACS
STANDARD
MAIN FEATURES:
Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 4 600 to 800 3 to 25 Unit A V mA
G
A2
A1
DESCRIPTION The Z04 series is suitable for general purpose AC switching applications. They can be found in applications such as touch light dimmers, fan controllers, HID lamp ignitors,... Different gate current sensitivities are available, allowing optimized performances when controlled directly from microcontrollers.
A1 A2
G
TO202-3 (Z04xxF)
ABSOLUTE MAXIMUM RATINGS
Symbol IT(RMS) Parameter RMS on-state current (full sine wave) TI = 30C Tamb = 25C ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25C) It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range F = 50 Hz F = 60 Hz t = 20 ms t = 16.7 ms Value 4 1 20 21 2.2 Tj = 125C Tj = 125C Tj = 125C 20 1.2 0.2 - 40 to + 150 - 40 to + 125 A s A/s A W C A Unit A
I t dI/dt IGM PG(AV) Tstg Tj
tp = 10 ms F = 120 Hz tp = 20 s
October 2001 - Ed: 4
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Z04 Series
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
Symbol Test Conditions Quadrant 02 IGT (1) VGT VGD IH (2) IL dV/dt (2) (dV/dt)c (2) VD = 12 V VD = VDRM IT = 50 mA IG = 1.2 IGT I - III - IV II VD = 67 %VDRM gate open Tj = 110C (dI/dt)c = 1.8 A/ms Tj = 110C MIN. MIN. RL = 30 RL = 3.3 k Tj = 125C ALL ALL ALL MAX. MAX. MIN. MAX. MAX. 3 6 12 10 0.5 5 10 15 20 1 3 Z04xx 05 5 1.3 0.2 10 15 25 100 2 25 25 50 200 5 V/s V/s 09 10 10 25 mA V V mA mA Unit
STATIC CHARACTERISTICS
Symbol VTM (2) Vto (2) Rd (2) IDRM IRRM
Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1
Test Conditions ITM = 5.5 A tp = 380 s Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. MAX.
Value 2.0 0.95 180 5 0.5
Unit V V m A mA
Threshold voltage Dynamic resistance VDRM = VRRM
THERMAL RESISTANCES
Symbol Rth(j-l) Rth(j-a) Junction to lead (AC) Junction to ambient Parameter Value 15 100 Unit C/W C/W
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Z04 Series
PRODUCT SELECTOR
Voltage Part Number 600 V Z0402MF Z0402SF Z0402NF Z0405MF Z0405SF Z0405NF Z0409MF Z0409SF Z0409NF Z0410MF Z0410SF Z0410NF X X X X X X X X X X X X 700 V 800 V 3 mA 3 mA 3 mA 5 mA 5 mA 5 mA 10 mA 10 mA 10 mA 25 mA 25 mA 25 mA Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard TO202-3 TO202-3 TO202-3 TO202-3 TO202-3 TO202-3 TO202-3 TO202-3 TO202-3 TO202-3 TO202-3 TO202-3 Sensitivity Type Package
ORDERING INFORMATION
Z
TRIAC SERIES CURRENT: 4A
04 02
MF
VOLTAGE: M: 600V S: 700V N: 800V
Blank
0AA2
PACKING MODE: 0AA2: Tube 1AA2: Bulk
PACKAGE: F: TO202-3
SENSITIVITY: 02: 3mA 05: 5mA 09: 10mA 10: 25mA
OTHER INFORMATION
Part Number Z04xxyF 0AA2 Z04xxyF 1AA2
Note: xx = sensitivity, y = voltage
Marking Z04xxyF Z04xxyF
Weight 0.8 g 0.8 g
Base quantity 50 250
Packing mode Tube Bulk
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Z04 Series
Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle).
P(W) 7 6 5 4 3 2 1 0 0.0 0.5 1.0 IT(RMS)(A) 1.5 2.0 2.5 3.0 3.5 4.0
Fig. 2: RMS on-state current versus ambient temperature (full cycle).
IT(RMS)(A) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0
Rth(j-a)=Rth(j-l)
Rth(j-a)=100C/W
Tamb(C) 0 25 50 75 100 125
Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration.
Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values).
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25C] 2.5 2.0
IGT
K=[Zth(j-a)/Rth(j-a)] 1E+0
1E-1
1.5
IH & IL
1E-2
tp(s)
1.0 0.5
Tj(C)
1E-3 1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.0 -40
-20
0
20
40
60
80
100
120
140
Fig. 5: Surge peak on-state current versus number of cycles.
Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of It.
ITSM (A), It (As) 500
Tj initial=25C
ITSM(A) 25 20 15 10 5 0
Number of cycles
Repetitive Tamb=25C Non repetitive Tj initial=25C
t=20ms
One cycle
100
dI/dt limitation: 20A/s
ITSM
10
It
tp (ms)
1000
1
10
100
1 0.01
0.10
1.00
10.00
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Z04 Series
Fig. 7: values).
On-state
characteristics
(maximum
Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 Z0402 0.6 Z0405 0.4 0.2 (dV/dt)c (V/s) 0.0 0.1 1.0 10.0
ITM(A) 20.0 10.0
Tj=Tj max.
Z0410
1.0
Tj=25C Tj max. Vto= 0.95 V Rd= 180 mW
Z0409
VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
100.0
Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 3 2 1 0 0 25 50 Tj (C) 75 100 125
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Z04 Series
PACKAGE MECHANICAL DATA TO202-3 (Plastic)
DIMENSIONS REF. Millimeters Min. Typ. 7.3 10.5 1.5 0.51 1.5 4.5 5.3 2.54 1.4 0.7 0.100 0.055 0.028 0.020 0.059 0.177 0.209 Max. 10.1 0.287 0.413 0.059 Min. Inches Typ. Max. 0.398
A
C O F P N1 N M D J H
A C D F H J M N N1 O P
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A http://www.st.com
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