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| SHINDENGEN Switching Power Transistor FX Series 2SC4057 (T8W45FX) 8A NPN OUTLINE DIMENSIONS Case : MTO-3P Unit : mm RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Mounting Torque Symbol Tstg Tj VCBO VCEO VCEX VEBO IC ICP IB IBP PT TOR Conditions VEB = 5V Tc = 25 Ratings -55150 150 600 450 600 7 8 16 4 8 80 0.8 Ratings Min 450 Max 0.1 Max 0.1 Max 0.1 Min 10 Min 5 Max 1.0 Max 1.5 Max 1.56 STD 20 Max 0.5 Max 2.0 Max 0.2 Unit V V V A A W Nm Electrical Characteristics (Tc=25) Item Symbol Collector to Emitter Sustaining Voltage VCEO(sus) Collector Cutoff Current ICBO ICEO Emitter Cutoff Current IEBO DC Current Gain hFE hFEL Collector to Emitter Saturation Voltage VCE(sat) Base to Emitter Saturation Voltage VBE(sat) Thermal Resistance jc Transition Frequency fT Turn on Time ton Storage Time ts Fall Time tf Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions IC = 0.2A At rated Voltage At rated Voltage VCE = 5V, IC = 4A VCE = 5V, IC = 1mA IC = 4A IB = 0.8A Junction to case VCE = 10V, IC = 0.8A IC = 4A IB1 = 0.8A, IB2 = 1.6A RL = 37.5, VBB2 = 4V Unit V mA mA V V /W MHz s 2SC4057 hFE - I C VCE = 5V 100 Tc = 150C 100C 50C 25C 10 0C DC Current Gain hFE -25C -55C 1 0.001 0.01 0.1 1 10 16 Collector Current IC [A] 2SC4057 Saturation Voltage 3 2A 4A 8A 16A 2.5 3 IC = 1A 2.5 2 16A 2 1.5 8A 2A 4A 1.5 1 1 Collector-Emitter Voltage VCE [V] 0.5 0.5 Tc = 25C 0 0.1 1 8 0 0.01 Base Current IB [A] Base-Emitter Voltage VBE [V] IC = 1A 2SC4057 Switching Time - IC ts 1 Switching Time tSW [s] ton 0.1 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCC = 150V Tc = 25C 0.01 0 1 2 3 4 5 6 7 8 Collector Current IC [A] 2SC4057 Switching Time - VCC ts 1 Switching Time tSW [s] ton 0.1 tf IC = 4A IB1 = 0.8A IB2 = 1.6A VBB2 = 4V Tc = 25C 0.01 0 50 100 150 200 250 300 Collector Voltage VCC [V] 2SC4057 Switching Time - Tc ts 1 ton Switching Time tSW [s] tf 0.1 IC = 4A IB1 = 0.8A IB2 = 1.6A VBB2 = 4V R L = 37.5 0.01 0 50 100 150 Case Temperature Tc [C] 2SC4057 L-Load Switching Time - IC ts 1 Switching Time tSW [s] 0.1 tf + tvs tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 25C 0.01 0 1 2 3 4 5 6 7 8 Collector Current IC [A] 2SC4057 L-Load Switching Time - IC (At High Temperature) ts 1 Switching Time tSW [s] tf + tvs 0.1 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 100C 0.01 0 1 2 3 4 5 6 7 8 Collector Current IC [A] 2SC4057 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-5 10-3 10-4 10-2 10-1 100 101 Time t [s] 2SC4057 16 10ms 10 DC 1ms Forward Bias SOA 150s 50s Collector Current IC [A] 1 0.1 Tc = 25C Single Pulse 0.01 1 10 100 450 Collector-Emitter Voltage VCE [V] 2SC4057 100 Collector Current Derating Collector Current Derating [%] 80 IS/B limit 60 40 PT limit 20 VCE = fixed 0 0 50 100 150 Case Temperature Tc [C] 2SC4057 16 Reverse Bias SOA 14 12 Collector Current IC [A] 10 8 6 4 IB1 = 0.3IC IB2 = 2.4A VBB2 = 5V Tc < 150C 2 0 0 100 200 300 400 500 600 Collector-Emitter Voltage VCE [V] |
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