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Power Transistors
2SD2136
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1416
7.50.2
Unit: mm
4.50.2
16.01.0
2.50.1
* High forward current transfer ratio hFE which has satisfactory linearity. * Low collector-emitter saturation voltage VCE(sat) * Allowing supply with the radial taping
10.80.2
0.650.1
0.850.1 1.00.1 0.8 C
90
Features
3.80.2
0.8 C
0.70.1 0.70.1 1.150.2 1.150.2
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 60 6 3 5 1.5 150 -55 to +150 Unit V V
0.50.1 0.8 C 1 2 3 2.050.2
0.40.1
V A A W C C
2.50.2
2.50.2
1: Emitter 2: Collector 3: Base MT-3-A1 Package
Electrical Characteristics Ta = 25C 3C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage
*1
Symbol VCEO VBE ICES ICEO IEBO hFE1 *2 hFE2
*1 *1
Conditions IC = 30 mA, IB = 0 VCE = 4 V, IC = 3 A VCE = 60 V, VBE = 0 VCE = 30 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A IC = 3 A, IB = 0.375 A VCE = 5 V, IE = - 0.1 A, f = 200 MHz IC = 1 A, IB1 = 0.1 A, IB2 = - 0.1 A
Min 60
Typ
Max
Unit V
1.8 200 300 1 40 10 1.2 220 0.5 2.5 0.4 250
V A A mA V MHz s s s
Collector-emitter cutoff current (Emitter-base short) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio
Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
VCE(sat) fT ton tstg tf
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 P 40 to 90 Q 70 to 150 R 120 to 250
Publication date: September 2003
SJD00246BED
1
2SD2136
PC Ta
2.0
Without heat sink
IC VCE
5
TC=25C
IC VBE
8
VCE=4V
Collector power dissipation PC (W)
1.6
4
25C
90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA
Collector current IC (A)
Collector current IC (A)
IB=100mA
6
TC=100C -25C
1.2
3
4
0.8
2
2
0.4
1
10mA
0
0
40
80
120
160
0
0
2
4
6
8
10
12
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100
IC/IB=8
hFE IC
104
VCE=4V
fT I C
300
VCB=10V f=200MHz TC=25C
Forward current transfer ratio hFE
10
TC=100C 25C
103
TC=100C 25C
Transition frequency fT (MHz)
250
200
1
-25C
102
-25C
150
100
0.1
10
50
0.01 0.01
0.1
1
10
1 0.01
0.1
1
10
0 0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Safe operation area
100
Single pulse TC=25C
Rth t
104
Without heat sink
Thermal resistance Rth (C/W)
103
Collector current IC (A)
10
ICP t=100ms IC t=1s
102
1
10
t=10ms
0.1
1
0.01 0.1
1
10
100
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector-emitter voltage VCE (V)
Time t (s)
2
SJD00246BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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