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| 2SK2003-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = 30V Guarantee Avalanche Proof N-channel MOS-FET 600V 2,4 4A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20K) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 600 600 4 16 30 40 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I I I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV DR DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=600V Tch=25C VGS=0V Tch=125C VGS=30V VDS=0V ID=2A VGS=10V ID=2A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=4A VGS=10V RGS=10 L=100H Tch=25C Min. 600 2,5 Typ. 3,0 10 0,2 10 2 4 1000 85 20 20 15 45 15 Max. 3,5 500 1,0 100 2,4 1500 130 30 30 25 70 25 4 16 1,65 2 4 IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C 1,1 400 2 Unit V V A mA nA S pF pF pF ns ns ns ns A A A V ns C - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 62,5 3,125 Unit C/W C/W FUJI ELECTRIC GmbH; Lyoner Strae 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56 N-channel MOS-FET 600V 2,4 2SK2003-01MR FAP-IIA Series Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics 4A 40W > Characteristics Typical Output Characteristics ID [A] 1 RDS(ON) [] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(ON) [] 4 gfs [S] 5 VGS(th) [V] 6 ID [A] ID [A] Tch [C] Typical Capacitance vs. VDS Typical Input Charge Forward Characteristics of Reverse Diode C [nF] 7 VDS [V] 8 VGS [V] IF [A] 9 VDS [V] Qg [nC] VSD [V] Allowable Power Dissipation vs. TC Safe operation area Zth(ch-c) [K/W] Transient Thermal impedance PD [W] 10 ID [A] 12 11 Tc [C] VDS [V] t [s] This specification is subject to change without notice! |
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