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| Power F-MOS FETs 2SK3029 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 7.30.1 1.80.1 unit: mm 6.50.1 5.30.1 4.350.1 2.30.1 0.50.1 s Applications 2.50.1 0.8max 0.930.1 1.00.1 0.10.05 0.50.1 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 100 20 5 10 1.25 10 1 150 -55 to +150 Unit V V A A mJ 1 2 0.750.1 2.30.1 4.60.1 3 1: Gate 2: Drain 3: Source U Type Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25C Ta = 25C Internal Connection W C C S G D L = 0.1mH, IL = 5A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 30V, ID = 3A VGS = 10V, RL = 10 Conditions VDS = 80V, VGS = 0 VGS = 20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 3A VGS = 4V, ID = 3A VDS = 10V, ID = 3A IDR = 5A, VGS = 0 240 VDS = 10V, VGS = 0, f = 1MHz 60 25 12 20 130 330 12.5 125 2.5 100 1 0.28 0.33 4 -1.5 2.5 0.42 0.5 min typ max 10 10 Unit A A V V m m S V pF pF pF ns ns ns ns C/W C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere 1.00.2 1 |
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