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Silicon MOS FETs (Small Signal)
2SK656
Silicon N-Channel MOS FET
For switching
unit: mm
4.00.2
3.00.2 0.70.1
s Features
q High-speed switching q Small drive current owing to high input inpedance q High electrostatic breakdown voltage
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
Symbol VDSS VGSO ID IDP PD Tch Tstg
Ratings 50 8 100 200 200 150 -55 to +150
Unit V V mA mA mW C C
1
2
3
1.27 1.27
2.540.15
1: Source 2: Drain 3: Gate EIAJ: SC-72 New S Type Package
Internal Connection
D R1 G R2 S
s Electrical Characteristics (Ta = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance High level output voltage Low level output voltage Input resistance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VOH VOL R1 + Coss ton
*2
Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100A, VGS = 0 ID = 100A, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDD = 5V, VGS = 1V, RL = 200 VDD = 5V, VGS = 5V, RL = 200
min
typ
max 10
2.00.2
s Absolute Maximum Ratings (Ta = 25C)
marking
+0.2 0.45-0.1
15.60.5
Unit A A V
40 50 1.5
80
3.5 50
V mS V
20 4.5
35
1 100 9 200
V k pF pF pF s s
R2*1 VDS = 10V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 5V, RL = 200 VDD = 5V, VGS = 5 to 0V, RL = 200
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Turn-off time
*1 *2
4.5 1.1 1 1
toff*2
Resistance ratio R1/R2 = 1/50 Pulse measurement
1
Silicon MOS FETs (Small Signal)
PD Ta
240 120 Ta=25C 200 100 100
2SK656
ID VDS
120 VDS=5V
ID VGS
Allowable power dissipation PD (mW)
Drain current ID (mA)
160
80
Drain current ID (mA)
VGS=6.0V 5.5V 5.0V 4.5V 40
80
Ta=-25C 25C
120
60
60
75C
80
4.0V 3.5V 3.0V
40
40
20
20
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10
0 0 2 4 6 8 10
Ambient temperature Ta (C)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
| Yfs | VGS
50
Ciss, Coss VDS
Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF)
VDS=5V Ta=25C VGS=0 f=1MHz Ta=25C Ciss 8
RDS(on) VGS
Drain to source ON-resistance RDS(on) ()
120 ID=20mA 100
12
Forward transfer admittance |Yfs| (mS)
40
10
80
30
6
60
Ta=75C
20
4
Coss
40
25C -25C
10
2
20
0 0 2 4 6 8 10
0 0.1
0 0 2 4 6 8 10
0.3
1
3
10
30
100
Gate to source voltage VGS (V)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
IO VIN
10 3 VO=5V Ta=25C 1000 300
VIN IO
VO=1V Ta=25C
Output current IO (mA)
0.3 0.1 0.03 0.01 0.003 0.001 0 1 2 3 4 5
Input voltage VIN (V)
1
100 30 10 3 1 0.3 0.1 0.1
0.3
1
3
10
30
100
Input voltage VIN (V)
Output current IO (mA)
2

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