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| SPW20N60S5 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance VDS RDS(on) ID 600 0.19 20 P-TO247 V A Type SPW20N60S5 Package P-TO247 Ordering Code Q67040-S4238 Marking 20N60S5 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TC = 25 C TC = 100 C A 20 13 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 10 A, VDD = 50 V I D puls EAS 40 690 1 20 20 30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25C A V W C VGS Ptot T j , T stg 208 -55... +150 Operating and storage temperature Rev. 2.1 Page 1 2004-03-30 SPW20N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 20 A, Tj = 125 C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Symbol min. RthJC RthJA Values typ. max. 0.6 50 260 C K/W Unit Tsold Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=1000, VGS=VDS VDS=600V, VGS=0V, Tj=25C, Tj=150C Values typ. 700 4.5 0.5 0.16 0.43 12 max. 5.5 600 3.5 - Unit V V(BR)DS VGS=0V, ID=20A A 5 250 100 0.19 nA Gate-source leakage current IGSS VGS=20V, VDS=0V VGS=10V, ID=13A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Rev. 2.1 Page 2 2004-03-30 SPW20N60S5 Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol Conditions min. Values typ. 12 3000 1170 28 83 160 120 25 130 30 max. 195 45 Unit g fs Ciss Coss Crss V DS2*I D*RDS(on)max, ID=13A - S pF V GS=0V, V DS=25V, f=1MHz Effective output capacitance, 2) Co(er) energy related Effective output capacitance, 3) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time V GS=0V, V DS=0V to 480V pF t d(on) tr t d(off) tf V DD=350V, V GS=0/10V, ID=20A, R G=3.6 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg VDD=350V, ID=20A - 21 47 79 8 103 - nC VDD=350V, ID=20A, VGS=0 to 10V V(plateau) VDD=350V, ID=20A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 2.1 Page 3 2004-03-30 SPW20N60S5 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IF=IS VR=350V, IF =IS , diF/dt=100A/s Symbol IS ISM Conditions min. TC=25C Values typ. 1 610 12 max. 20 40 1.2 - Unit A V ns C Typical Transient Thermal Characteristics Symbol Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.00769 0.015 0.029 0.114 0.136 0.059 K/W Value typ. Unit Symbol Value typ. Unit Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.0003763 0.001411 0.001931 0.005297 0.012 0.091 Ws/K Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Rev. 2.1 Page 4 2004-03-30 SPW20N60S5 1 Power dissipation Ptot = f (TC) 240 SPW20N60S5 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25C 10 2 W 200 180 A 10 1 Ptot 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 10 -1 10 0 ID 160 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 0 4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS A 75 K/W 10 -1 60 55 20V 15V 12V 11V ZthJC ID 50 45 40 35 30 25 20 15 10 5 10V 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 9V 8V 7V 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 0 0 5 10 15 20 V 30 VDS Rev. 2.1 Page 5 2004-03-30 SPW20N60S5 5 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS 35 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, V GS 1.5 m A 20V 12V 10V 1.3 9V 25 RDS(on) 1.2 1.1 1 0.9 0.8 0.7 ID 8.5V 20 8V 6V 6.5V 7V 7.5V 8V 8.5V 9V 10V 12V 20V 15 7.5V 10 7V 6.5V 0.6 0.5 0.4 5 6V 0 0 5 10 15 V VDS 25 0.3 0 5 10 15 20 25 30 A ID 40 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 13 A, VGS = 10 V 1.1 SPW20N60S5 8 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s A 70 0.9 60 55 50 RDS(on) 0.8 25C 150C ID 98% typ C 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -60 -20 20 60 100 180 45 40 35 30 25 20 15 10 5 0 0 5 10 V 20 Tj VGS Rev. 2.1 Page 6 2004-03-30 SPW20N60S5 9 Typ. gate charge VGS = f (QGate) 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPW20N60S5 parameter: ID = 20 A pulsed 16 V 0.2 VDS max SPW20N60S5 A 12 0.8 VDS max VGS 10 1 8 6 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 20 40 60 80 nC 10 4 2 10 -1 0 0 0 120 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 20 12 Avalanche energy EAS = f (Tj) par.: ID = 10 A, VDD = 50 V mJ 750 A 600 550 EAS 10 Tj(START)=25C IAR 500 450 400 350 300 250 5 Tj(START)=125C 200 150 100 50 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 4 s 10 tAR 0 20 40 60 80 100 120 C 160 Tj Rev. 2.1 Page 7 2004-03-30 SPW20N60S5 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPW20N60S5 14 Avalanche power losses PAR = f (f ) parameter: E AR=1mJ 500 V W V(BR)DSS 680 660 640 620 200 600 580 560 540 -60 04 10 5 6 PAR C 300 100 -20 20 60 100 180 10 Hz f 10 Tj 15 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 5 16 Typ. Coss stored energy Eoss=f(VDS) 14 pF 10 4 Ciss J 12 11 Eoss Coss Crss 10 9 8 7 10 3 C 10 2 6 5 4 10 1 3 2 1 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Rev. 2.1 Page 8 2004-03-30 SPW20N60S5 Definition of diodes switching characteristics Rev. 2.1 Page 9 2004-03-30 SPW20N60S5 P-TO-247-3-1 15.9 6.35 o3.61 5.03 2.03 4.37 20.9 9.91 6.17 D 7 D 1.75 1.14 0.243 1.2 2 2.92 5.46 16 0.762 MAX. 2.4 +0.05 General tolerance unless otherwise specified: Leadframe parts: 0.05 Package parts: 0.12 Rev. 2.1 41.22 2.97 x 0.127 5 5.94 20 Page 10 2004-03-30 SPW20N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 Page 11 2004-03-30 |
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