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Transistors with built-in Resistor
UNR521x Series (UN521x Series)
Silicon NPN epitaxial planar type
Unit: mm
(0.425)
For digital circuits Features
* Costs can be reduced through downsizing of the equipment and reduction of the number of parts * S-Mini type package, allowing automatic insertion through the tape packing and magazine packing
0.3+0.1 -0.0 3
0.15+0.10 -0.05
1.250.10
2.10.1 5
1
2
(0.65) (0.65) 1.30.1
Resistance by Part Number
* UNR5210 * UNR5211 * UNR5212 * UNR5213 * UNR5214 * UNR5215 * UNR5216 * UNR5217 * UNR5218 * UNR5219 * UNR521D * UNR521E * UNR521F * UNR521K * UNR521L * UNR521M * UNR521N * UNR521T * UNR521V * UNR521Z Marking symbol (R1) (UN5210) 8L 47 k (UN5211) 8A 10 k (UN5212) 8B 22 k (UN5213) 8C 47 k (UN5214) 8D 10 k (UN5215) 8E 10 k (UN5216) 8F 4.7 k (UN5117) 8H 22 k (UN5218) 8I 0.51 k (UN5219) 8K 1 k (UN521D) 8M 47 k (UN521E) 8N 47 k (UN521F) 8O 4.7 k (UN521K) 8P 10 k (UN521L) 8Q 4.7 k (UN521M) EL 2.2 k (UN521N) EX 4.7 k (UN521T) EZ 22 k (UN521V) FD 2.2 k (UN521Z) FF 4.7 k (R2) 10 k 22 k 47 k 47 k 5.1 k 10 k 10 k 22 k 10 k 4.7 k 4.7 k 47 k 47 k 47 k 2.2 k 22 k
10
2.00.2
0.90.1
0.9+0.2 -0.1
1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package
Internal Connection
R1 B R2 E
0 to 0.1
C
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 150 150 -55 to +150 Unit V V mA mW C C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2004 SJH00024CED
0.20.1
1
UNR521x Series
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base UNR5210/5215/5216/5217 cutoff current UNR5213 (Collector open) UNR5212/5214/521D/ 521E/521M/521N/521T UNR521Z UNR5211 UNR521F/521K UNR5219 UNR5218/521L/521V Forward current transfer ratio UNR521V UNR5218/521K/521L UNR5219/521D/521F UNR5211 UNR5212/521E UNR521Z UNR5213/5214/521M UNR521N/521T UNR5210*/5215*/5216*/5217* Collector-emitter saturation voltage UNR521V Output voltage high-level Output voltage low-level UNR5213/521K UNR521D UNR521E Transition frequency Input UNR5218 fT R1 VOH VOL VCE(sat) IC = 10 mA, IB = 0.3 mA IC = 10 mA, IB = 1.5 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k VCC = 5 V, VB = 3.5 V, RL = 1 k VCC = 5 V, VB = 10 V, RL = 1 k VCC = 5 V, VB = 6.0 V, RL = 1 k VCB = 10 V, IE = -2 mA, f = 200 MHz -30% 150 0.51 1.0 2.2 4.7 10 22 47 +30% MHz k 4.9 0.2 V V hFE VCE = 10 V, IC = 5 mA 6 20 30 35 60 60 80 80 160 400 460 0.25 V 200 0.4 0.5 1.0 1.5 2.0 20 Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 Min 50 50 0.1 0.5 0.01 0.1 0.2 mA Typ Max Unit V V A
resistance UNR5219 UNR521M/521V UNR5216/521F/521L/521N UNR521Z UNR5211/5214/5215/521K UNR5212/5217/521T UNR5210/5213/521D/521E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 No-rank 160 to 460
2
SJH00024CED
UNR521x Series
Electrical Characteristics (continued) Ta = 25C 3C
Parameter Resistance UNR521M ratio UNR521N UNR5218/5219 UNR521Z UNR5214 UNR521T UNR521F UNR521V UNR5211/5212/5213/521L UNR521K UNR521E UNR521D 0.8 1.70 1.70 3.7 0.37 0.17 0.08 Symbol R1/R2 Conditions Min Typ 0.047 0.1 0.10 0.21 0.21 0.47 0.47 1.0 1.0 2.13 2.14 4.7 1.2 2.60 2.60 5.7 0.57 0.25 0.12 Max Unit
Common characteristics chart PT Ta
240
Total power dissipation PT (mW)
200
160
120
80
40
0
0
40
80
120
160
Ambient temperature Ta (C)
Characteristics charts of UNR5210 IC VCE
IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102 IC / IB = 10
400
hFE IC
VCE = 10 V
60
10
Forward current transfer ratio hFE
50
Collector current IC (mA)
300 Ta = 75C 25C 200 -25C 100
40 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.1 mA
30
0.3 mA
1 Ta = 75C 25C 10-1 -25C 10-2 10-1 1 10 102
20
10
0
0
2
4
6
8
10
12
0
1
10
102
103
Collector-emitter voltage VCE
(V)
Collector current IC (mA)
Collector current IC (mA)
SJH00024CED
3
UNR521x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
102
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR5211 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C
VCE(sat) IC
102 IC / IB = 10 400
hFE IC
VCE = 10 V
Collector current IC (mA)
120
0.7 mA 0.6 mA 0.5 mA 0.4 mA
Forward current transfer ratio hFE
10
300
Ta = 75C
80
0.3 mA
1 25C 10 -1 -25C
200 25C 100 -25C
0.2 mA 40
Ta = 75C
0.1 mA 0 0 2 4 6 8 10 12
10 -2 10 -1
1
10
102
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0 10 -1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
4
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UNR521x Series
Characteristics charts of UNR5212 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 120
VCE(sat) IC
102 IC / IB = 10
hFE IC
400 VCE = 10 V
Collector current IC (mA)
0.7 mA 0.6 mA 0.5 mA 0.4 mA
10
Forward current transfer ratio hFE
300
Ta = 75C
80 0.3 mA
1 Ta = 75C
200 25C -25C
25C 10 -1 -25C
40
0.2 mA
100
0.1 mA 0 0 2 4 6 8 10 12
10 -2 10 -1
1
10
102
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR5213 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA
VCE(sat) IC
102 IC / IB = 10
400
hFE IC
VCE = 10 V
Forward current transfer ratio hFE
Collector current IC (mA)
120
10
300
Ta = 75C 25C -25C
1
200
40
0.2 mA
25C 10 -1 -25C 10 -2 10 -1
Ta = 75C
100
0.1 mA 0
0
2
4
6
8
10
12
1
10
102
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00024CED
5
UNR521x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
103
4
3
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
10
1
2
10
10 -1
1
0 10-1
1
10
102
1 0.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR5214 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 80 0.4 mA 0.3 mA 40 102
VCE(sat) IC
IC / IB = 10
hFE IC
400 VCE = 10 V
120
Forward current transfer ratio hFE
Collector current IC (mA)
10
300 Ta = 75C 200 25C -25C 100
1
Ta = 75C 10 -1 -25C 10 -2 10 -1 25C
0.2 mA 0.1 mA
0
0
2
4
6
8
10
12
0
1 10 102
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
102
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
6
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UNR521x Series
Characteristics charts of UNR5215 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C
102
VCE(sat) IC
IC / IB = 10
hFE IC
400 VCE = 10 V
120
0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA
10
Forward current transfer ratio hFE
Collector current IC (mA)
300 Ta = 75C
80
1
200 25C -25C 100
Ta = 75C 10 -1 -25C 10 -2 10 -1 1 10 102 25C
40
0
0
2
4
6
8
10
12
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C 102
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR5216 IC VCE
Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102 IC / IB = 10
400
hFE IC
VCE = 10 V
160
120
10
Forward current transfer ratio hFE
Ta = 75C 300 25C -25C 200
Collector current IC (mA)
80
1
Ta = 75C 10 -1 25C
40
100
0.1 mA
0 0 2 4 6 8 10 12
-25C 10 -2 10 -1 1 10 102
0 1 10 102 103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00024CED
7
UNR521x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR5217 IC VCE
a IB =1 .0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA
VCE(sat) IC
T = 25C
hFE IC
400 VCE = 10 V
Forward current transfer ratio hFE
100
Collector-emitter saturation voltage VCE(sat) (V)
120
102
IC / IB = 10
Collector current IC (mA)
10
300
80 0.4 mA 0.3 mA 0.2 mA
60
1
Ta = 75C
200
Ta = 75C 25C
40
25C 10 -1
100
-25C
20 0 0 2 4 6 8
0.1 mA
-25C 10 -2 10 -1 1 10 102
0 1 10 102 103
10
12
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C 102
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
8
SJH00024CED
UNR521x Series
Characteristics charts of UNR5218 IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102 IC / IB = 10
hFE IC
160 VCE = 10 V
240
Collector current IC (mA)
160
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA
Forward current transfer ratio hFE
200
10
120
Ta = 75C 80 25C -25C 40
120 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0 0.1 mA 0 2 4 6 8 10 12
1 Ta = 75C
80
10 -1
25C
40
10 -2 10 -1
-25C 1 10 102
0
1
10
102
103
Collector-emitter voltage VCE
(V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
103
10
3
102
1
2
10
10-1
1
0 10-1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10-2 10-1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR5219 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
240 Ta = 25C
VCE(sat) IC
102 IC / IB = 10
160
hFE IC
VCE = 10 V
Collector current IC (mA)
160
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA
Forward current transfer ratio hFE
200
10
120
120 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12
1 Ta = 75C 25C
80
Ta = 75C 25C -25C
80
10 -1
40
40
-25C
0
10 -2 10 -1
1
10
102
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
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9
UNR521x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6
IO VIN
f = 1 MHz IE = 0 Ta = 25C
104 VO = 5 V Ta = 25C
102
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
103
10
3
102
1
2
10
10 -1
1
10 -1
0
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR521D IC VCE
Ta = 25C 0.9 mA 0.8 mA 0.5 mA 0.7 mA 0.4 mA 25 0.6 mA 0.3 mA IB = 1.0 mA 20
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102 IC / IB = 10
hFE IC
160 VCE = 10 V Ta = 75C 25C -25C 120
30
10
Forward current transfer ratio hFE
Collector current IC (mA)
15 0.2 mA 10 0.1 mA
1
80
25C 10 -1 -25C 10 -2 10 -1
Ta = 75C
40
5
0
0
1 10 102
0
2
4
6
8
10
12
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
2.0 2.5 3.0 3.5 4.0
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 1.5
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
10
SJH00024CED
UNR521x Series
Characteristics charts of UNR521E IC VCE
IB = 1.0 mA 0.7 mA Ta = 25C 0.9 mA 0.6 mA 0.8 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102 IC / IB = 10
160
hFE IC
VCE = 10 V
60
Forward current transfer ratio hFE
50
Collector current IC (mA)
10
120
Ta = 75C 25C -25C
40 0.3 mA 0.2 mA 0.4 mA 0.5 mA 0.1 mA
30
1
Ta = 75C
80
20
25C 10 -1
40
10
-25C 10 -2 10 -1 1 10 102
0 1 10 102 103
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
2.0 2.5 3.0 3.5 4.0
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 1.5
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR521F IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102 IC / IB = 10
160
hFE IC
VCE = 10 V
240
160
0.9 mA 0.8 mA 0.7 mA 0.6 mA IB = 1.0 mA 0.5 mA 0.4 mA 0.3 mA
10
Forward current transfer ratio hFE
200
Collector current IC (mA)
120
120
1
Ta = 75C
Ta = 75C 80 25C -25C
80
25C 10 -1
40
40 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12
-25C 10 -2 10 -1 1 10 102
0 1 10 102 103
Collector-emitter voltage VCE
(V)
Collector current IC (mA)
Collector current IC (mA)
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UNR521x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR521K IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
240 Ta = 25C
VCE(sat) IC
102 IC / IB = 10
240
hFE IC
VCE = 10 V
10
160 IB = 1.2 mA 1.0 mA 0.8 mA 80 0.6 mA 0.4 mA 0.2 mA 0 0 2 4 6 8 10 12
Forward current transfer ratio hFE
200
200
Collector current IC (mA)
160 Ta = 75C 120 25C 80 -25C 40
120
1
25C 10 -1
Ta = 75C -25C
40
10 -2
1
10
102
103
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
102
VIN IO
VO = 0.2 V Ta = 25C
5
4
3
Input voltage VIN (V)
102
10
1
2
10 -1
1
0
1
10
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Output current IO (mA)
12
SJH00024CED
UNR521x Series
Characteristics charts of UNR521L IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102 IC / IB = 10
240
hFE IC
VCE = 10 V
240
10
Forward current transfer ratio hFE
200
200 Ta = 75C
Collector current IC (mA)
160 IB = 1.0 mA 0.8 mA 0.6 mA 80 0.4 mA
160
120
1 Ta = 75C 10 -1 25C -25C 10 -2
120
25C -25C
80
40 0.2 mA 0 0 2 4 6 8 10 12
40
1
10
102
103
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
4
3
Input voltage VIN (V)
102
10
1
2
10 -1
1
0
1
10
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Output current IO (mA)
Characteristics charts of UNR521M IC VCE
Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10 IC / IB = 10
500
hFE IC
VCE = 10 V
240
200
Forward current transfer ratio hFE
400
Collector current IC (mA)
1
160
Ta = 75C 10 -1 25C
300
Ta = 75C 25C
120
0.5 mA 0.4 mA 0.3 mA 0.2 mA
200
80
-25C 10 -2
-25C
40
0.1 mA
100
0
10 -3
0
2
4
6
8
10
12
1
10
102
103
0
1
10
102
103
Collector-emitter voltage VCE
(V)
Collector current IC (mA)
Collector current IC (mA)
SJH00024CED
13
UNR521x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
5 f = 1 MHz IE = 0 Ta = 25C 4
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
Output current IO (A)
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1
0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR521N IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 40 0.1 mA
10
VCE(sat) IC
IC / IB = 10
hFE IC
480 VCE = 10 V
120
Forward current transfer ratio hFE
400 Ta = 75C
Collector current IC (mA)
1
320 25C 240
80
10 -1 25C
Ta = 75C
160
-25C
80
-25C 10 -2 1 10 102 103
0
0
2
4
6
8
10
12
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C 102
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
0.6 0.8 1 1.2 1.4
103
10
1
2
10
10 -1
1
0
1
10
102
1 0.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
14
SJH00024CED
UNR521x Series
Characteristics charts of UNR521T IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 40 0.1 mA
10
VCE(sat) IC
IC / IB = 10
hFE IC
480 VCE = 10 V
120
Forward current transfer ratio hFE
400 Ta = 75C
Collector current IC (mA)
1
320 25C
80
240
10 -1 25C
Ta = 75C
160
-25C
-25C 10 -2 1 10 102 103
80
0
0
2
4
6
8
10
12
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
102
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0
1
10
102
1 0.4
0.6
0.8
1
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR521V IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C 10
VCE(sat) IC
IC / IB = 10
240
hFE IC
VCE = 10 V
Collector current IC (mA)
120
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA
Forward current transfer ratio hFE
200
1
160 Ta = 75C 25C 80 -25C
80
0.6 mA 0.5 mA
120
Ta = 75C 10 -1 25C -25C
40 0.4 mA 0.3 mA 0.2 mA 10 12
40
0
10 -2
0
2
4
6
8
1
10
102
103
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00024CED
15
UNR521x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0
1
10
102
1 0.4
0.6
0.8
1
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR521Z IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 40 0.1 mA
10
VCE(sat) IC
IC / IB = 10
480
hFE IC
VCE = 10 V
120
Forward current transfer ratio hFE
400
Collector current IC (mA)
1
320
Ta = 75C
80
240
25C -25C
10 -1
Ta = 75C 25C -25C
160
80
0
0
2
4
6
8
10
12
10 -2
1
10
102
103
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C 102
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0
1
10
102
1 0.4
0.6
0.8
1
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
16
SJH00024CED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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