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PNP Silicon AF Transistors
q q q q q
BCX 69
For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 68 (NPN)
Type BCX 69 BCX 69-10 BCX 69-16 BCX 69-25
Marking - CF CG CH
Ordering Code (tape and reel) Q62702-C1714 Q62702-C1867 Q62702-C1868 Q62702-C1869
Pin Configuration 1 2 3 B C E
Package1) SOT-89
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point Rth JA Rth JS

Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values 20 25 5 1 2 100 200 1 150 - 65 ... + 150
Unit V
A mA W C
75 20
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BCX 69
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 30 mA Collector-base breakdown voltage IC = 10 A Emitter-base breakdown voltage IE = 1 A Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 C Emitter cutoff current VEB = 5 V DC current gain1) IC = 5 mA, VCE = 10 V IC = 500 mA, VCE = 1 V BCX 69 BCX 69-10 BCX 69-16 BCX 69-25 IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA Base-emitter voltage1) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V AC characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 20 MHz fT - 100 - MHz VCEsat VBE - - 0.6 - - 1 V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 - - IEB0 hFE 50 85 85 100 160 60 - - - 100 160 250 - - - 375 160 250 375 - 0.5 V - - - - 100 100 10 nA
A A
Values typ. max.
Unit
20 25 5
- - -
- - -
V
-
1)
Pulse test: t 300 s, D = 2 %.
Semiconductor Group
2
BCX 69
Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy
Transition frequency fT = f (IC) VCE = 5 V
Permissible pulse load Ptot max/Ptot DC = f (tp)
Collector cutoff current ICB0 = f (TA) VCB = 25 V
Semiconductor Group
3
BCX 69
Base-emitter saturation voltage IC = f (VBEsat) hFE = 10
Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10
Collector current IC = f (VBE) VCE = 1 V
DC current gain hFE = f (IC) VCE = 1 V
Semiconductor Group
4

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