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| DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT23 package. APPLICATIONS * A wide range of RF applications such as: - Mixers and oscillators in TV tuners - RF communications equipment. PINNING PIN 1 2 3 base emitter collector DESCRIPTION Marking code: E1p. 1 Top view 2 MSB003 BFS17 handbook, halfpage 3 Fig.1 SOT23. QUICK REFERENCED DATA SYMBOL VCBO VCEO IC Ptot fT F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency noise figure up to Ts = 70 C; note 1 IC = 25 mA; VCE = 5 V; f = 500 MHz; Tj = 25 C IC = 2 mA; VCE = 5 V; RS = 50 ; f = 500 MHz; Tj = 25 C open emitter open base CONDITIONS - - - - 1 4.5 TYP. MAX. 25 15 25 300 - - UNIT V V mA mW GHz dB LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature up to Ts = 70 C; note 1 open base open collector CONDITIONS open emitter - - - - - - -65 - MIN. MAX. 25 15 2.5 25 50 300 +150 150 UNIT V V V mA mA mW C C Note to the Quick reference data and the Limiting values 1. Ts is the temperature at the soldering point of the collector pin. September 1995 2 Philips Semiconductors Product specification NPN 1 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT Cc Ce Cre F PARAMETER collector cut-off current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance noise figure CONDITIONS IE = 0; VCB = 10 V IC = 2 mA; VCE = 1 V IC = 25 mA; VCE = 1 V IC = 2 mA; VCE = 5 V; f = 500 MHz IC = 25 mA; VCE = 5 V; f = 500 MHz IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 1 mA; VCE = 5 V; f = 1 MHz IC = 2 mA; VCE = 5 V; RS = 50 ; f = 500 MHz MIN. - 25 25 - - - - - - TYP. - 90 90 1 1.6 0.8 - 0.65 4.5 PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 70 C; note 1 VALUE 260 BFS17 UNIT K/W MAX. 10 - - - - 1.5 2 - - UNIT nA GHz GHz pF pF pF dB September 1995 3 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 handbook, halfpage 100 MEA395 handbook, halfpage 2.0 MEA396 Cc (pF) hFE 1.6 1.2 50 0.8 0.4 0 0 10 20 IC (mA) 30 0 0 10 20 VCB (V) 30 VCE = 1 V; Tj = 25 C. IE = ie = 0; f = 1 MHz; Tj = 25 C. Fig.2 DC current gain as a function of collector current. Fig.3 Collector capacitance as a function of collector-base voltage. handbook, halfpage 2 MEA393 handbook, halfpage 10 MEA397 fT (GHz) F (dB) 1 5 0 0 10 20 IC (mA) 30 0 0 4 8 12 16 20 IC (mA) VCE = 5 V; f = 500 MHz; Tj = 25 C. VCE = 5 V; RS = 50 ; f = 500 MHz; Tj = 25 C. Fig.4 Transition frequency as a function of collector current. Fig.5 Minimum noise figure as a function of collector current. September 1995 4 Philips Semiconductors Product specification NPN 1 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BFS17 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 September 1995 5 Philips Semiconductors Product specification NPN 1 GHz wideband transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BFS17 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 6 |
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