 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DTC114E SERIES Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO-92 package which is designed for through hole applications. http://onsemi.com Preferred Devices NPN SILICON BIAS RESISTOR TRANSISTOR MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25C (1.) Derate above 25C Symbol VCBO VCEO IC PD 350 2.81 mW mW/C Value 50 50 100 Unit Vdc Vdc mAdc 2 BASE COLLECTOR 3 1 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol RJA TJ, Tstg TL 260 10 Value 357 -55 to +150 Unit C/W C 1 2 3 C Sec DEVICE MARKING AND RESISTOR VALUES Device DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z Marking DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 R2 (K) 10 22 47 47 1.0 2.2 4.7 47 Shipping 5000/Box CASE 29 TO-92 (TO-226) STYLE 1 Preferred devices are recommended choices for future use and best overall value. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. (c) Semiconductor Components Industries, LLC, 2000 1 May, 2000 - Rev. 0 Publication Order Number: DTC114E/D DTC114E SERIES ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z ICBO ICEO IEBO -- -- -- -- -- -- -- -- -- -- -- -- 50 50 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 -- -- nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage (2.) (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS (2.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z hFE 35 60 80 80 160 160 3.0 8.0 15 80 -- 60 100 140 140 350 350 5.0 15 30 200 -- -- -- -- -- -- -- -- -- -- -- 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) DTC144E/DTC114Y (IC = 10 mA, IB = 0.3 mA) DTD113E/DTC143E (IC = 10 mA, IB = 5 mA) DTC123E (IC = 10 mA, IB = 1 mA) DTC114T/DTC143T/ (IC = 10 mA, IB = 1 mA) DTC143Z/DTC124E Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) DTC114E DTC124E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z DTC144E VCE(sat) VOL -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 2 DTC114E SERIES ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) DTC114E DTC124E DTC144E DTC114Y DTC123E DTC143E DTD113E DTC114T DTC143T DTC143Z DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z DTC114E/DTC124E/DTC144E DTC114Y DTC114T/DTC143T DTD113E/DTC123E/DTC143E DTC143Z R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 0.8 0.17 -- 0.8 0.055 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 1.0 0.21 -- 1.0 0.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 1.2 0.25 -- 1.2 0.185 k Symbol VOH Min 4.9 Typ -- Max -- Unit Vdc (VCC = 5.0 V, VB = 0.05 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) Input Resistor Resistor Ratio R1/R2 http://onsemi.com 3 DTC114E SERIES TYPICAL ELECTRICAL CHARACTERISTICS DTC114E 250 PD , POWER DISSIPATION (MILLIWATTS) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 25C 75C 200 0.1 150 100 RJA = 625C/W 0.01 50 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 1. Derating Curve Figure 2. VCE(sat) versus IC 1000 h FE, DC CURRENT GAIN (NORMALIZED) VCE = 10 V Cob , CAPACITANCE (pF) TA = 75C 25C -25C 100 4 f = 1 MHz lE = 0 V TA = 25C 3 2 1 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 3. DC Current Gain Figure 4. Output Capacitance 100 75C IC , COLLECTOR CURRENT (mA) 25C TA = -25C 10 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 10 1 0.1 0.01 VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0.001 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 5. VCE(sat) versus IC Figure 6. VCE(sat) versus IC http://onsemi.com 4 DTC114E SERIES TYPICAL ELECTRICAL CHARACTERISTICS DTC124E VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 25C 75C h FE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75C 25C -25C 100 0.1 0.01 - 0.001 0 40 20 60 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 f = 1 MHz lE = 0 V TA = 25C 100 75C 25C TA = -25C Cob , CAPACITANCE (pF) 3 IC , COLLECTOR CURRENT (mA) 10 1 2 0.1 1 0.01 VO = 5 V 0 2 4 6 8 10 0 0 10 20 30 40 50 0.001 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V Vin , INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 25C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 5 DTC114E SERIES TYPICAL ELECTRICAL CHARACTERISTICS DTC144E VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 h FE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 1 1000 VCE = 10 V TA = 75C 25C -25C 100 75C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 100 75C 10 25C TA = -25C 0.8 Cob , CAPACITANCE (pF) 0.6 1 0.4 0.1 0.2 0.01 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V TA = -25C V in , INPUT VOLTAGE (VOLTS) 10 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 6 DTC114E SERIES TYPICAL ELECTRICAL CHARACTERISTICS DTC114Y VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 0.1 75C 300 VCE = 10 250 25C 200 -25C 150 100 50 0 TA = 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C 100 75C IC, COLLECTOR CURRENT (mA) 25C TA = -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 7 DTC114E SERIES TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM P OR OTHER LOGIC Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 23. Open Collector Inverter: Inverts the Input Signal Figure 24. Inexpensive, Unregulated Current Source http://onsemi.com 8 DTC114E SERIES PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- K XX G H V 1 D J C SECTION X-X N N DIM A B C D G H J K L N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 6: PIN 1. GATE 2. SOURCE & SUBSTRATE 3. DRAIN STYLE 11: PIN 1. ANODE 2. CATHODE & ANODE 3. CATHODE STYLE 16: PIN 1. ANODE 2. GATE 3. CATHODE STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE STYLE 26: PIN 1. VCC 2. GROUND 2 3. OUTPUT STYLE 31: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. MAIN TERMINAL 2 STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN STYLE 27: PIN 1. MT 2. SUBSTRATE 3. MT STYLE 32: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 8: PIN 1. DRAIN 2. GATE 3. SOURCE & SUBSTRATE STYLE 13: PIN 1. ANODE 1 2. GATE 3. CATHODE 2 STYLE 18: PIN 1. ANODE 2. CATHODE 3. NOT CONNECTED STYLE 23: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 28: PIN 1. CATHODE 2. ANODE 3. GATE STYLE 33: PIN 1. RETURN 2. INPUT 3. OUTPUT STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 9: PIN 1. BASE 1 2. EMITTER 3. BASE 2 STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 19: PIN 1. GATE 2. ANODE 3. CATHODE STYLE 24: PIN 1. EMITTER 2. COLLECTOR/ANODE 3. CATHODE STYLE 29: PIN 1. NOT CONNECTED 2. ANODE 3. CATHODE STYLE 34: PIN 1. INPUT 2. GROUND 3. LOGIC STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2 STYLE 20: PIN 1. NOT CONNECTED 2. CATHODE 3. ANODE STYLE 25: PIN 1. MT 1 2. GATE 3. MT 2 STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE STYLE 35: PIN 1. GATE 2. COLLECTOR 3. EMITTER http://onsemi.com 9 DTC114E SERIES Notes http://onsemi.com 10 DTC114E SERIES Notes http://onsemi.com 11 DTC114E SERIES Thermal Clad is a trademark of the Bergquist Company ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 1:00pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 1:00pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 12:00pm to 5:00pm UK Time) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, England, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2745 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 DTC114E/D |
Price & Availability of DTC114E
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |