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E2Q0030-38-72 electronic components
This version: Jul. 1998 Previous version: Jan. 1998 KGF1323
electronic components KGF1323
Power FET(Plastic Package Type)
GENERAL DESCRIPTION
The KGF1323, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET that features high efficiency and high output power. The KGF1323 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 33 dBm), and plastic package, the KGF1323 is ideal as a transmitter-final-stage amplifier for personal handy phones, such as TDMA-type cellular phones.
FEATURES
* High output power: 33 dBm (min.) * High efficiency: 70% (typ.) * Low thermal resistance: 23C/W (typ.) * Package: 3PMMP (SOT-89 type)
PACKAGE DIMENSIONS
4.50.1 1.6 +0.15 -0.10 1.50.1
2.50.1 10.2
40.2
0.48 +0.08 -0.05 0.4 +0.08 -0.05 1.50.1 1.50.1 30.1 0.4
+0.08 -0.05
0.390.05
Package material Lead frame material Pin treatment Solder plate thickness
Epoxy resin Cu Solder plating 5 mm or more
(Unit: mm)
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electronic components
KGF1323
MARKING
(1)
P2 XX
PRODUCT TYPE
(2) LOT NUMBER (NUMERICAL or ALPHABETICAL)
(3)
(1) Gate (2) Source (3) Drain
CIRCUIT
Drain(3)
Gate(1)
Source(2)
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electronic components
KGF1323
ABSOLUTE MAXIMUM RATINGS
Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25C Ta = 25C Ta = 25C Ta = Tc = 25C -- -- Unit V V A W C C Min. -- -6.0 -- -- -- -45 Max. 10 0.4 3.0 5 150 125
ELECTRICAL CHARACTERISTICS
(Ta = 25C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Gate-source cut-off voltage Output power Drain efficiency Linear gain Thermal resistance Symbol IGSS IGDO IDS(off) IDSS VGS(off) PO hD GLIN Rth Condition VGS = -6 V VGD = -16 V VDS = 10 V, VGS = -6 V VDS = 1.5 V, VGS = 0 V VDS = 3 V, IDS = 4.8 mA (*1), PIN = 22 dBm (*1), PIN = 22 dBm (*1), PIN = 0 dBm Channel to case Unit mA mA mA A V dBm % dB C/W Min. -- -- -- 2.0 -3.8 33.0 60 -- -- Typ. -- -- -- -- -- 33.5 70 15.0 14 Max. 100 500 1500 -- -2.8 -- -- -- --
*1 Condition: f = 850 MHz, VDS = 5.8 V, IDSQ = 240 mA
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electronic components
KGF1323
RF CHARACTERISTICS
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electronic components Typical S Parameters
KGF1323
VDS = 5.8 V, VGS = -2.80 V, IDS = 240 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.921 0.921 0.920 0.917 0.917 0.914 0.913 0.911 0.909 0.907 0.903 0.901 0.899 0.893 0.892 0.888 0.885 0.881 0.875 0.873 0.869 0.866 0.863 0.856 0.854 0.852 -154.27 -160.15 -164.62 -168.17 -171.22 -173.90 -176.22 -178.42 179.67 177.63 175.71 173.93 172.15 170.52 169.01 167.01 165.66 163.90 162.38 160.75 159.09 157.56 155.95 154.35 152.84 151.31 3.891 3.291 2.854 2.519 2.250 2.041 1.871 1.721 1.599 1.491 1.404 1.324 1.248 1.188 1.127 1.077 1.027 0.983 0.944 0.906 0.876 0.844 0.816 0.789 0.756 0.736 91.63 87.28 82.96 79.31 76.01 72.42 69.42 66.28 63.39 60.39 57.29 54.72 51.47 48.90 45.99 43.37 40.36 37.89 35.01 32.96 29.90 27.58 24.58 22.20 19.48 17.09 0.037 0.038 0.039 0.040 0.040 0.041 0.042 0.043 0.044 0.045 0.046 0.047 0.048 0.048 0.050 0.051 0.052 0.053 0.055 0.055 0.057 0.058 0.060 0.061 0.063 0.063 20.87 19.65 18.86 18.39 18.30 17.74 17.99 17.72 18.08 17.76 17.98 17.75 17.57 17.85 17.23 17.60 17.24 16.83 16.62 16.02 16.20 15.62 14.77 14.20 12.48 11.90 0.655 0.657 0.659 0.661 0.660 0.661 0.660 0.660 0.660 0.661 0.658 0.660 0.654 0.660 0.653 0.658 0.651 0.655 0.650 0.652 0.649 0.649 0.649 0.646 0.649 0.646 -176.53 -178.18 -179.48 179.28 178.41 177.38 176.61 175.52 174.76 173.75 172.81 171.94 170.90 170.04 169.08 168.02 167.14 165.92 164.99 163.98 162.58 161.68 160.24 159.52 158.10 157.17
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electronic components Typical S Parameters
KGF1323
VDS = 5.8 V, VGS = -2.80 V, IDS = 240 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W
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electronic components
KGF1323
Test Circuit and Bias Configuration for KGF1323 at 850 MHz
VGS
CF
CB
CB
CF
VDS
RFC IN CC C1
T1
T2
(1) (2)
(3)
T3
T4
RFC OUT CC
C2
C3
C4
f = 850 MHz T1: Z0 = 50 W, E = 28.5 deg T2: Z0 = 50 W, E = 16.5 deg
T3: Z0 = 50 W, E = 15.0 deg T4: Z0 = 50 W, E = 30.0 deg
C1 = 2.0 pF, C2 = 10.0 pF, C3 = 5.0 pF, C4 = 1.0 pF CC = 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 200 nH
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