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| SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 2 - FEBRUARY 1996 ZDT1048 C1 C1 C2 C2 PARTMARKING DETAIL T1048 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Tj:Tstg VALUE 50 17.5 5 20 5 500 -55 to +150 UNIT V V V A A mA C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally Derate above 25C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ C mW/ C C/ W C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 357 ZDT1048 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current SYMBOL V(BR)CBO VCES VCEO VCEV V(BR)EBO ICBO IEBO ICES MIN. 50 50 17.5 50 5 TYP. 85 85 24 85 8.7 0.3 0.3 0.3 27 55 120 200 200 1000 900 280 300 300 250 50 440 450 450 300 80 150 60 120 250 80 10 10 10 45 75 160 240 300 1100 1000 MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC=100A IC=100A IC=10mA IC=100A, VEB=1V IE=100A VCB=35V VEB=4V VCES=35V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=5A, IB=100mA* IC=5A, IB=50mA* IC=5A, IB=100mA* IC=5A, VCE=2V* IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=5A, VCE=2V* IC=20A, VCE=2V* MHz pF ns ns IC=50mA, VCE=10V f=50MHz VCB=10V, f=1MHz IC=4A, IB=40mA, VCC=10V IC=4A, IB=40mA, VCC=10V Collector-Emitter Saturation VCE(sat) Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 1200 Transition Frequency Output Capacitance Switching Times fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 358 ZDT1048 TYPICAL CHARACTERISTICS 0.8 0.6 0.4 0.2 IC/IB=50 IC/IB=100 IC/IB=200 +25C 0.8 0.6 0.4 0.2 -55C +25C +100C +175C IC/IB=100 1mA 10mA 100mA 1A 10A 100A 1mA 10mA 100mA 1A 10A 100A IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC 700 VCE=2V 600 500 400 300 200 100 1mA 1.4 +100C +25C 1.2 IC/IB=100 -55C +100C +175C 1.0 +25C 0.8 -55C 0.6 0.4 0.2 10mA 100mA 1A 10A 100A 1mA 10mA 100mA 1A 10A 100A IC-Collector Current IC-Collector Current hFE v IC VBE(sat) v Ic 1.2 VCE=2V -55C 1.0 +25C +100C 100 10 1 0.1 0.01 10mV Single Pulse Test Tamb=25C 0.8 +175C 0.6 0.4 0.2 1mA DC 1s 100ms 10ms 1ms 100us 10mA 100mA 1A 10A 100A 100mV 1V 10V 100V IC-Collector Current VCE - Collector Voltage VBE(on) v IC 3 - 359 Safe Operating Area |
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