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| SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 JANUARY 1996 ZDT1049 C1 C1 C2 C2 PARTMARKING DETAIL T1049 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Tj:Tstg VALUE 80 25 5 20 5 500 -55 to +150 UNIT V V V A A mA C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally Derate above 25C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ C mW/ C C/ W C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 360 ZDT1049 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current SYMBOL V(BR)CBO VCES VCEO VCEV V(BR)EBO ICBO IEBO ICES MIN. 80 80 25 80 5 TYP. 120 120 35 120 8.75 0.3 0.3 0.3 30 60 125 155 890 820 250 300 300 200 35 430 450 450 350 70 180 45 125 380 60 10 10 10 45 80 180 220 950 900 MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV CONDITIONS. IC=100A IC=100A IC=10mA IC=100A, VEB=1V IE=100A VCB=50V VEB=4V VCES=50V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=4A, IB=50mA* IC=4A, IB=50mA* IC=4A, VCE=2V* IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=4A, VCE=2V* IC=20A, VCE=2V* MHz pF ns ns IC=50mA, VCE=10V f=50MHz VCB=10V, f=1MHz IC=4A, IB=40mA, VCC=10V IC=4A, IB=40mA, VCC=10V Collector-Emitter Saturation VCE(sat) Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 1200 Transition Frequency Output Capacitance Turn - On Time Turn -Off Time fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 361 ZDT1049 TYPICAL CHARACTERISTICS 1.0 0.8 0.6 0.4 0.2 0 IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 +25C 1.0 0.8 0.6 0.4 0.2 0 -55C +25C +100C +175C IC/IB=100 1mA 10mA 100mA 1A 10A 100A 1mA 10mA 100mA 1A 10A 100A IC-Collector Current VCE(sat) v IC IC-Collector Current VCE(sat) v IC 700 VCE=2V 600 500 400 300 200 100 0 1mA 10mA 100mA 1A 10A 100A +100C +25C -55C 1.4 1.2 1.0 IC/IB=100 -55C +25C +100C 0.8 +175C 0.6 0.4 0.2 0 10mA 100mA 1A 10A 100A IC-Collector Current hFE V IC IC-Collector Current VBE(sat) v IC 1.4 1.2 1.0 VCE=2V 100 Singe Pulse Test Tamb = 25C -55C +25C +100C 0.8 +175C 0.6 0.4 0.2 0 1mA 10mA 100mA 1A 10A 100A 10 1 0.1 DC 1s 100ms 10ms 1ms 100s 0.1 0.1V 1V 10V 100V IC-Collector Current VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area 3 - 362 |
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