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| SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE "SuperBAT" ISSUE 2 - OCTOBER 1997 7 1 ZHCS1000 C 1 A 3 FEATURES: * High current capability * Low V F APPLICATIONS: * Mobile telecomms, PCMIA & SCSI * DC-DC Conversion PARTMARKING DETAILS : ZS1 2 3 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current Forward Voltage @ IF = 1000mA(typ) Average Peak Forward Current;D.C.= 50% Non Repetitive Forward Current t100s t10ms Power Dissipation at Tamb= 25 C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 40 1000 425 1750 12 5.2 500 -55 to + 150 125 SOT23 UNIT V mA mV mA A A mW C C ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V (BR)R VF MIN. 40 TYP. 60 240 265 305 355 390 425 495 420 50 25 12 270 290 340 400 450 500 600 -- 100 MAX. UNIT V mV mV mV mV mV mV mV mV A pF ns CONDITIONS. IR= 300A IF= IF= IF= IF= IF= IF= IF= IF= * 50mA* 100mA* 250mA* 500mA* 750mA* 1000mA* 1500mA* 1000mA,Ta= 100 C Reverse Current Diode Capacitance Reverse Recovery Time IR CD t rr V R= 30V f= 1MHz,V R= 25V switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed conditions. Pulse width= 300s. Duty cycle 2% ZHCS1000 TYPICAL CHARACTERISTICS 10 100m IR - Reverse Current (A) 10m +125C IF - Forward Current (A) 1 1m 100u +100C 100m +50 C 10u 1u 100n +25C 10m +125C +25C -55C -55 C 1m 0 0.1 0.2 0.3 0.4 0.5 0.6 10n 0 10 20 30 VF - Forward Voltage (V) VR - Reverse Voltage (V) IR v VR IF v VF Typical PF(av) - Avg Pwr Diss (W) 0.8 0.6 Typical Tj=125C IF(av) - Avg Fwd Cur (A) t1 DC D=t1/t p I F(pk) tp I F(av) =D x I F(pk) 0.6 D=0.5 D=0.2 0.4 t1 D=t1/t 0.4 p I F(pk) D=0.1 0.2 DC D=0.5 D=0.2 D=0.1 D=0.05 0.2 D=0.05 tp =D x I F(av)I F(pk) 0 75 85 95 105 115 125 0 0 0.4 x P =I F(av) V F(av) F 0.8 1.2 TC - Case Temperature (C) IF(av) - Avg Fwd Curr (A) IF(av) v TC 125 200 PF(av) v IF(av) 100 Rth=100 C/W Rth=200 C/W Rth=300 C/W CD - Diode Capacitance (pF) Ta - Ambient Temp (C) Typical 100 75 1 10 100 0 0 10 20 30 VR - Reverse Voltage (V) VR - Reverse Voltage (V) Ta v VR CD v VR ZHCS1000 TYPICAL CHARACTERISTICS MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate. |
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