 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 APRIL 94 FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low saturation voltage ZTX749 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C derate above 25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -35 -25 -5 -6 -2 1 5.7 -55 to +200 UNIT V V V A A W mW/ C C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -35 -25 -5 -0.1 -10 -0.1 -0.12 -0.23 -0.9 -0.8 70 100 75 15 200 200 150 50 -0.3 -0.5 -1.25 -1 TYP. MAX. UNIT V V V A A A CONDITIONS. IC=-100A, IE=0 IC=-10mA, IB=0* IE=-100A, IC=0 VCB=-30V VCB=-30V,T amb =100C VEB=-4V, IE=0 IC=1A, IB=-100mA* IC=2A, IB=-200mA* IC=1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VCE(sat) VBE(sat) VBE(on) V V V V Static Forward Current hFE Transfer Ratio 300 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-254 ZTX749 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Transition Frequency Output Cpacitance Switching Times SYMBOL fT Cobo ton toff MIN. 100 TYP. 160 55 40 450 100 MAX. UNIT MHz pF ns ns CONDITIONS. IC=-100mA, VCE=-5V f=100MHz VCB=-10V f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) MAX. 175 116 70 UNIT C/W C/W C/W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.5 200 Max Power Dissipation - (Watts) Thermal Resistance (C/W) D=1 (D.C.) 2.0 t1 D=t1/tP tP C 1.5 as e te m pe 1.0 Am ra 100 D=0.5 bie tu nt t re em 0.5 0 per at u re D=0.2 D=0.1 Single Pulse -40 -20 0 20 40 60 80 100 120 140 160 180 200 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-255 ZTX749 TYPICAL CHARACTERISTICS 1.8 1.6 td tr tf ns 160 IB1=IB2=IC/10 VCE=-10V VCE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 IC/IB=10 0.001 0.01 0.1 1 10 IC/IB=100 Switching time 1.4 ts 140 ns 1200 120 1000 100 80 600 60 40 200 20 0 0.01 tf ts tr td 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.2 200 1.0 160 120 VBE(sat) - (Volts) hFE - Gain VCE=2V 0.8 IC/IB=10 0.6 IC/IB=100 80 0.4 0.001 0.01 0.1 1 10 40 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 10 VBE(sat) v IC Single Pulse Test at Tamb=25C 1.0 IC - Collector Current (Amps) 1.2 VBE - (Volts) VCE=2V 0.8 1.0 0.6 0.1 D.C. 1s 100ms 10ms 1.0ms 0.4 0.001 0.01 0.1 1 10 0.01 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-256 |
Price & Availability of ZTX749
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |